是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | FLANGE MOUNT, O-MBFM-P2 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | 风险等级: | 5.92 |
Is Samacsys: | N | 其他特性: | RADIATION HARDENED |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 250 V |
最大漏极电流 (Abs) (ID): | 7 A | 最大漏极电流 (ID): | 7 A |
最大漏源导通电阻: | 0.7 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-204AA | JESD-30 代码: | O-MBFM-P2 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 功耗环境最大值: | 75 W |
最大功率耗散 (Abs): | 75 W | 最大脉冲漏极电流 (IDM): | 21 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | PIN/PEG | 端子位置: | BOTTOM |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2N7278D | RENESAS | 4A, 250V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
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2N7278D1 | ETC | TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 4A I(D) | TO-205AF |
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2N7278D2 | ETC | TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 4A I(D) | TO-205AF |
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2N7278D3 | ETC | TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 4A I(D) | TO-205AF |
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2N7278H | RENESAS | 4A, 250V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
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2N7278H1 | RENESAS | TRANSISTOR,MOSFET,N-CHANNEL,250V V(BR)DSS,4A I(D),TO-205AF |
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