2N7002VPTGP

更新时间： 2024-02-14 06:49:04

品牌	Logo	应用领域
力勤 - CHENMKO		/
页数	文件大小	规格书
5页	230K
描述
Transistor,

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技术参数
数据手册

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2N7002VPTGP 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.55	Is Samacsys：	N
湿度敏感等级：	1	峰值回流温度（摄氏度）：	260
处于峰值回流温度下的最长时间：	10	Base Number Matches：	1

2N7002VPTGP 数据手册

RATING CHARACTERISTIC CURVES ( 2N7002DSPT )

Electrical Characteristics T_A= 25°C unless otherwise noted

Symbol

Parameter

Conditions

Min

Typ

Max

Units

OFF CHARACTERISTICS

BV_DSS

I_DSS

Drain-Source Breakdown Voltage V_GS= 0 V, I_D= 250 µA

Zero Gate Voltage Drain Current V_DS= 40 V, V_GS= 0 V

µA

T_C=125°C

0.5

100

-100

I_GSSF

I_GSSR

Gate - Body Leakage, Forward

Gate - Body Leakage, Reverse

V_GS= 20 V, V_DS= 0 V

V_GS= -20 V, V_DS= 0 V

ON CHARACTERISTICS (Note 1)

V_GS(th)

Gate Threshold Voltage

V_DS= V_GS, I_D= 250 µA

1.9

2.5

V_GS= 10 V, I

_D= 510 m

R_DS(ON)

Static Drain-Source On-Resistance

Ω

V_GS= 4.5 V, I_D= 350 mA

1.6

4.0

1500

On-State Drain Current

10V

I_D(ON)

V_GS= 10 V, V_DS

g_FS

400

Forward Transconductance

V_DS=

10 V

, I_D= 510 mA

DYNAMIC CHARACTERISTICS

Q_g

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

V_DS= 25 V, V_GS= 10 V,

I_D= 510 mA

Q_gs

Q_gd

0.19

0.33

C_iss

C_oss

C_rss

t_on

Input Capacitance

V_DS= 25 V, V_GS= 0 V,

f = 1.0 MHz

Output Capacitance

Reverse Transfer Capacitance

Turn-On Time

V_DD

= 25V

I_D= 250 mA, V_GS= 10 V,

t_r

R_GEN= 25

Ω

t_off

t_f

Turn-Off Time

V_DD= 25 V,

I_D= 250 mA, V_GS= 10 V,

R_GEN= 25

Ω

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

I_S

Maximum Continuous Drain-Source Diode Forward Current

Maximum Pulsed Drain-Source Diode Forward Current

510

1.5

I_SM

V_SD

Drain-Source Diode Forward

Voltage

V_GS= 0 V, I_S= 200 mA (Note 1)

1.2

0.8

Note:

1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

123 4 5

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