2N7002KA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Static Characteristics
V(BR)DSS VGS=0V, ID=250µA
Drain-Source Breakdown Voltage
Gate-Threshold Voltage(2)
Zero Gate Voltage Drain Current
V
V
60
VGS(th)
IDSS
VDS=VGS, ID=250µA
VDS=48V, VGS=0V
1.0
1.4
2.5
µA
µA
1.0
±10
VGS=±20V, VDS=0V
VGS=±10V, VDS=0V
VGS=±5V, VDS=0V
Gate-Body Leakage Current
Drain-Source On-Resistance(2)
IGSS
±200
±100
nA
nA
VGS=10V, ID=500mA
VGS=4.5V, ID=200mA
5.0
5.3
RDS(on)
Ω
VGS=0V, IS=300mA,VR=25V
dl/dt=-100A/μs
Qr
Recovered Charge
nC
30
Dynamic Characteristics
Input Capacitance(3)
Output Capacitance(3)
Ciss
Coss
Crss
35
13
8
VDS=25V,VGS=0V, f=1MHz
pF
ns
Reverse Transfer Capacitance(3)
Switching Characteristics
Turn-on Delay Time(3)
Turn-off Delay Time(3)
Reverse Recovery Time
td(on)
td(off)
10
15
VDD=25V,VGS=10V,RL=250Ω,
RGS=50Ω,RGEN=25Ω
VGS=0V, IS=300mA,VR=25V,
dl/dt=-100A/μs
30
trr
Source-Drain Diode Characteristics
VSD
VGS=0V, IS=200mA
Diode Forward Voltage
V
V
0.82
1.3
Gate-Source Zener Diode
Gate-Source Breakdown Voltage
BVGSO
IGS=±1mA,(Open Drain)
±21.5
±30
Note: 2. Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2%.
3. These Parameters Have No Way to Verify.
Rev.3-7-08122022
2/5
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