Datasheet > 2N7002K_10

2N7002K_10

更新时间： 2022-12-24 12:42:23

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管
页数	文件大小	规格书
6页	219K
描述
N-Channel Enhancement Mode Field Effect Transistor

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2N7002K_10 数据手册

March 2010

2N7002K

N-Channel Enhancement Mode Field Effect Transistor

Features

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Ultra-Small Surface Mount Package

• Pb Free/RoHS Compliant

• ESD HBM=2000V (Typical:3000V) as per JESD22 A114 and ESD CDM=2000V as per JESD22 C101

SOT-23

Marking : 7K

Absolute Maximum Ratings * T_A= 25°C unless otherwise noted

Symbol

V_DSS

V_DGR

V_GSS

I_D

Parameter

Drain-Source Voltage

Value

Units

Drain-Gate Voltage R_GS≤ 1.0MΩ

Gate-Source Voltage

Drain Current

±20

Continuous

Pulsed

300

800

T_J

Operating Junction Temperature Range

Storage Temperature Range

-55 to +150

°C

T_STG

* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.

Thermal Characteristics

Symbol

Parameter

Total Device Dissipation

Derating above T_A= 25°C

Value

Units

P_D

350

2.8

mW/°C

R_θJA

Thermal Resistance, Junction to Ambient *

350

°C/W

* Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size

www.fairchildsemi.com

2N7002K Rev. A2

12 3 4 5 6

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