Datasheet > 2N7002K_12

2N7002K_12

更新时间： 2022-03-30 22:26:05

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	112K
描述
Small Signal MOSFET 60 V, 380 mA, Single, N.Channel, SOT.23

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2N7002K_12 数据手册

2N7002K, 2V7002K

Small Signal MOSFET

60 V, 380 mA, Single, N−Channel, SOT−23

Features

• ESD Protected

• Low R

DS(on)

http://onsemi.com

• Surface Mount Package

• 2V Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAX

I MAX

(BR)DSS

DS(on)

1.6 W @ 10 V

2.5 W @ 4.5 V

60 V

380 mA

SIMPLIFIED SCHEMATIC

Applications

• Low Side Load Switch

• Level Shift Circuits

Gate

• DC−DC Converter

Drain

• Portable Applications i.e. DSC, PDA, Cell Phone, etc.

MAXIMUM RATINGS (T = 25°C unless otherwise stated)

Source

Rating

Drain−to−Source Voltage

Gate−to−Source Voltage

Symbol

Value

Unit

DSS

(Top View)

MARKING DIAGRAM

& PIN ASSIGNMENT

Drain

Drain Current (Note 1)

Steady State 1 sq in Pad

T = 25°C

380

270

T = 85°C

Drain Current (Note 2)

Steady State Minimum Pad

T = 25°C

320

230

T = 85°C

704 MG

SOT−23

CASE 318

STYLE 21

Power Dissipation

Steady State 1 sq in Pad

Steady State Minimum Pad

420

300

Gate

Source

Pulsed Drain Current (t = 10 ms)

1.5

704

= Specific Device Code*

= Date Code*

= Pb−Free Package

Operating Junction and Storage

Temperature Range

T , T

−55 to

+150

°C

STG

(Note: Microdot may be in either location)

Source Current (Body Diode)

300

260

*Specific Device Code, Date Code or overbar

orientation and/or location may vary depend-

ing upon manufacturing location. This is a

representation only and actual devices may

not match this drawing exactly.

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

°C

Gate−Source ESD Rating

(HBM, Method 3015)

ESD

2000

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 sq in pad size with 1 oz Cu.

2. Surface−mounted on FR4 board using 0.08 sq in pad size with 1 oz Cu.

ORDERING INFORMATION

†

Device

Package

Shipping

2N7002KT1G

SOT−23

3000 / Tape & Reel

(Pb−Free)

2V7002KT1G

SOT−23

3000 / Tape & Reel

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Publication Order Number:

May, 2012 − Rev. 10

2N7002K/D

12 3 4 5 6

下载PDF

与2N7002K_12相关器件

型号	品牌	描述	获取价格	数据表
2N7002K_14	PANJIT	60V N-Channel Enhancement Mode MOSFET - ESD Protected	获取价格
2N7002K_15	DIODES	N-CHANNEL ENHANCEMENT MODE MOSFET	获取价格
2N7002K_15	UTC	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR	获取价格
2N7002K-13	DIODES	Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal	获取价格
2N7002K215	NXP	TrenchMOSâ¢ logic level FET	获取价格
2N7002K-7	DIODES	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR	获取价格

产品中心

服务支持

精选活动

关于我们

帮助中心

2N7002K_12

2N7002K_12 数据手册

与2N7002K_12相关器件

与2N7002K_12相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

2N7002K_12

2N7002K_12 数据手册

与2N7002K_12相关器件

与2N7002K_12相关文章

您还可以找

您在本页遇到什么问题？