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2N7002K-7 PDF预览

2N7002K-7

更新时间: 2024-01-26 13:43:03
品牌 Logo 应用领域
美台 - DIODES 晶体小信号场效应晶体管开关光电二极管PC
页数 文件大小 规格书
5页 161K
描述
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

2N7002K-7 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:14 weeks
风险等级:0.47Samacsys Confidence:
Samacsys Status:Released2D Presentation:https://componentsearchengine.com/2D/0T/248860.2.3.png
Schematic Symbol:https://componentsearchengine.com/symbol.php?partID=248860PCB Footprint:https://componentsearchengine.com/footprint.php?partID=248860
3D View:https://componentsearchengine.com/viewer/3D.php?partID=248860Samacsys PartID:248860
Samacsys Image:https://componentsearchengine.com/Images/9/2N7002K-7.jpgSamacsys Thumbnail Image:https://componentsearchengine.com/Thumbnails/2/2N7002K-7.jpg
Samacsys Pin Count:3Samacsys Part Category:MOSFET (N-Channel)
Samacsys Package Category:SOT23 (3-Pin)Samacsys Footprint Name:SOT23
Samacsys Released Date:2017-01-11 16:09:24Is Samacsys:N
其他特性:HIGH RELIABILITY配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):0.3 A
最大漏极电流 (ID):0.3 A最大漏源导通电阻:2 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):5 pF
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.35 W认证状态:Not Qualified
子类别:FET General Purpose Powers表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2N7002K-7 数据手册

 浏览型号2N7002K-7的Datasheet PDF文件第1页浏览型号2N7002K-7的Datasheet PDF文件第2页浏览型号2N7002K-7的Datasheet PDF文件第4页浏览型号2N7002K-7的Datasheet PDF文件第5页 
2N7002K  
Typical Characteristics Curves (TA=25OC,unless otherwise noted)  
1.2  
1
1.2  
V
DS=10V  
V
GS= 10V ~ 6.0V  
5.0V  
4.0V  
1
0.8  
0.6  
0.4  
0.2  
0
0.8  
0.6  
0.4  
0.2  
0
T
J
=25OC  
3.0V  
0
1
2
3
4
5
6
0
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)  
VDS - Drain-to-Source Voltage (V)  
FIG.1-OutputCharacteristic
FIG.2- Transfer Characteristic  
5
4
3
2
1
0
5
4
3
ID=500mA  
V
GS=4.5V  
2
1
0
ID=200mA  
V
GS=10V  
2
3
4
5
6
7
8
9
10  
0
0.2  
0.4  
0.6  
0.8  
1
VGS - Gate-to-Source Voltage (V)  
ID - Drain Current (A)  
FIG.3- On Resistance vs Drain Current  
FIG.4- On Resistance vs Gate to Source Voltage  
1.8  
V
GS=10V  
ID=500mA  
1.6  
1.4  
1.2  
1
0.8  
0.6  
-50 -25  
0
25  
50  
75 100 125 150  
TJ - Junction Temperature (oC)  
FIG.5- On Resistance vs Junction Temperature  
STAD-JAN.03.2007  
PAGE . 3  

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