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2N6718G-A-T92-K PDF预览

2N6718G-A-T92-K

更新时间: 2024-02-12 11:31:55
品牌 Logo 应用领域
友顺 - UTC 开关晶体管
页数 文件大小 规格书
4页 160K
描述
Small Signal Bipolar Transistor, 1A I(C), NPN,

2N6718G-A-T92-K 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:CYLINDRICAL, O-PBCY-T3Reach Compliance Code:compliant
风险等级:5.63最大集电极电流 (IC):1 A
集电极-发射极最大电压:100 V配置:SINGLE
最小直流电流增益 (hFE):50JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:NPN
最大功率耗散 (Abs):0.85 W子类别:Other Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:BOTTOM晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):50 MHz
Base Number Matches:1

2N6718G-A-T92-K 数据手册

 浏览型号2N6718G-A-T92-K的Datasheet PDF文件第1页浏览型号2N6718G-A-T92-K的Datasheet PDF文件第3页浏览型号2N6718G-A-T92-K的Datasheet PDF文件第4页 
2N6718  
NPN SILICON TRANSISTOR  
ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATINGS  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
100  
100  
V
5
V
Collector Current (Continue)  
Collector Current (Pulse)  
1
2
A
IC  
A
SOT-89  
TO-126C  
TO-92  
0.5  
W
Total Power Dissipation  
PD  
1.6  
W
850  
mW  
°C  
°C  
°C  
Junction Temperature  
Operating Temperature  
Storage Temperature  
TJ  
+150  
-40 ~ +125  
-55 ~ +150  
TOPR  
TSTG  
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)  
PARAMETER SYMBOL TEST CONDITIONS  
MIN TYP MAX UNIT  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage (note)  
Emitter-Base Breakdown Voltage  
Collector-Emitter Saturation Voltage  
Collector Cut-Off Current  
BVCBO IC=100uA  
BVCEO IC=1mA  
100  
100  
5
V
V
BVEBO IE=10A  
VCE(SAT) IC=350mA, IB=35mA  
V
350 mV  
100 nA  
ICBO  
hFE1  
hFE2  
hFE3  
fT  
VCB=80V  
VCE=1V, IC=50mA  
80  
50  
20  
50  
DC Current Gain  
VCE=1V, IC=250mA  
VCE=1V, IC=500mA  
VCE=10V, IC=50mA, f=100MHz  
VCB=10V, IE=0, f=1MHz  
300  
Current Gain - Bandwidth Product  
Output Capacitance  
MHz  
Cob  
20  
pF  
Note: Pulse test: PulseWidth380s, Duty Cycle2%  
CLASSIFICATION OF hFE2  
RANK  
A
B
RANGE  
50~115  
95~300  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 4  
QW-R201-056.D  
www.unisonic.com.tw  

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