Datasheet > 2N6576_1

2N6576_1

更新时间： 2024-11-19 06:17:27

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管达林顿晶体管
页数	文件大小	规格书
4页	152K
描述
NPN Silicon Power Darlington Transistors

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2N6576_1 数据手册

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by 2N6576/D

SEMICONDUCTOR TECHNICAL DATA

General–purpose EpiBase power Darlington transistors, suitable for linear and

switching applications.

15 AMPERE

POWER TRANSISTORS

NPN SILICON

•

Replacement for 2N3055 and Driver

High Gain Darlington Performance

Built–in Diode Protection for Reverse Polarity Protection

Can Be Driven from Low–Level Logic

Popular Voltage Range

DARLINGTON

60, 90, 120 VOLTS

120 WATTS

Operating Range — –65 to +200 C

MAXIMUM RATINGS (1)

Rating

Symbol

2N6576 2N6577 2N6578

Unit

Vdc

Adc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

120

CEO(sus)

7.0

CASE 1–07

TO–204AA

(TO–3)

Collector Current — Continuous

— Peak

Base Current — Continuous

— Peak

0.25

0.50

Adc

Emitter Current — Continuous

— Peak

15.25

30.5

Total Power Dissipation

@ T = 25 C

120

0.685

Watts

W/ C

Derate above 25 C

Operating and Storage Junction

Temperature Range

T , T

J stg

–65 to +200

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

1.46

265

Unit

C/W

Thermal Resistance, Junction to Case

θJC

Maximum Lead Temperature for Soldering

Purposes: 1/16″ from Case for 10s.

(1) Indicates JEDEC Registered Data.

DARLINGTON SCHEMATIC

COLLECTOR

BASE

4 k

EMITTER

REV 7

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

12 3 4

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2N6576LEADFREE	CENTRAL	获取价格	暂无描述
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