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by 2N6576/D
SEMICONDUCTOR TECHNICAL DATA
General–purpose EpiBase power Darlington transistors, suitable for linear and
switching applications.
15 AMPERE
POWER TRANSISTORS
NPN SILICON
•
•
•
•
•
•
Replacement for 2N3055 and Driver
High Gain Darlington Performance
Built–in Diode Protection for Reverse Polarity Protection
Can Be Driven from Low–Level Logic
Popular Voltage Range
DARLINGTON
60, 90, 120 VOLTS
120 WATTS
Operating Range — –65 to +200 C
MAXIMUM RATINGS (1)
Rating
Symbol
2N6576 2N6577 2N6578
Unit
Vdc
Vdc
Vdc
Adc
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
V
60
60
90
90
120
120
CEO(sus)
V
CB
EB
V
7.0
CASE 1–07
TO–204AA
(TO–3)
Collector Current — Continuous
— Peak
I
C
15
30
Base Current — Continuous
— Peak
I
0.25
0.50
Adc
Adc
B
E
Emitter Current — Continuous
— Peak
I
15.25
30.5
Total Power Dissipation
P
D
@ T = 25 C
120
0.685
Watts
W/ C
C
Derate above 25 C
Operating and Storage Junction
Temperature Range
T , T
J stg
–65 to +200
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
1.46
265
Unit
C/W
C
Thermal Resistance, Junction to Case
R
θJC
Maximum Lead Temperature for Soldering
Purposes: 1/16″ from Case for 10s.
T
L
(1) Indicates JEDEC Registered Data.
DARLINGTON SCHEMATIC
COLLECTOR
BASE
4 k
50
EMITTER
REV 7
MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1