Datasheet > 2N6348AG

2N6348AG

更新时间： 2023-12-26 08:59:42

品牌	Logo	应用领域
力特 - LITTELFUSE		电机栅栅极调节器可控硅
页数	文件大小	规格书
6页	391K
描述
该三端双向可控硅主要用于全波交流控制应用，例如灯光调节器、电机控制、加热控制与电源；或用于需要全波硅门控固态设备的应用。任一电极加载阳极电压并触发正极或负极栅极后，三端双向可控硅型晶闸管会从阻断

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2N6348AG 数据手册

Thyristors Datasheet

2N6344A, 2N6348A, 2N6349A

Surface Mount – 600-800V

Maximum Ratings and Thermal Characteristics (TJ = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

2N6344A,

2N6348A

2N6349A

600

*Peak Repetitive Off-State Voltage (Note 1)

(T_J= -40 to 110°C, Sine Wave, 50 to 60 Hz, Gate Open)

V_DRM

V_RRM

800

(T_C=+80°C)

(T_C=+90°C)

*On-State RMS Current

(Full Cycle Sine Wave 50 to 60 Hz)

I_T

(RMS)

6.0

*Peak Non−Repetitive Surge Current

(One Full Cycle, Sine Wave 60 Hz, T_C= +80°C)

Preceded and followed by rated current

I_TSM

100

Circuit Fusing Considerations (t = 8.3 ms)

I²t

P_GM

P_G(AV)

I_GM

A²s

*Peak Gate Power (T_C= +80°C, Pulse Width = 2 µs)

*Average Gate Power (T_C= +80°C, t = 8.3 ms)

*Peak Gate Current (T_C= +80°C, Pulse Width = 2.0 µs)

*Peak Gate Voltage (T_C= +80°C, Pulse Width = 2.0 µs)

*Operating JunctionTemperature Range

0.5

2.0

V_GM

T_J

-40 to +125

-40 to +150

°C

*StorageTemperature Range

T_stg

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

* Indicates JEDEC Registered Data.

1. V_DRMand V_RRMfor all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

Thermal Characteristics

Rating

Symbol

R_8JC

Value

2.0

Unit

°C/W

°C

† Thermal Resistance, Junction to Case

Maximum LeadTemperature for Soldering Purposes, 1/8” from case for 10 seconds

T_L

260

† Indicates JEDEC Registered Data.

Electrical Characteristics - OFF (TC = 25°C unless otherwise noted; Electricals apply in

both directions)

Characteristic

Symbol

Min

Typ

Max

Unit

µA

*Peak Repetitive Blocking Current

(V_D= V_DRM= V_RRM; Gate Open)

T_J= 25°C

T_J= 100°C

I_DRM

I_RRM

2.0

Speciﬁcations are subject to change without notice.

Revised: GD. 02/11/21

123 4 5 6

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