是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | Reach Compliance Code: | compliant |
风险等级: | 5.69 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 7 A | 集电极-发射极最大电压: | 50 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 30 |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | PNP |
表面贴装: | NO | 端子面层: | Matte Tin (Sn) - with Nickel (Ni) barrier |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 4 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N6109S | MOTOROLA |
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Power Bipolar Transistor, 7A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti | |
2N6109T | MOTOROLA |
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Power Bipolar Transistor, 7A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti | |
2N6109U2 | MOTOROLA |
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Power Bipolar Transistor, 7A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti | |
2N6109UA | MOTOROLA |
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Power Bipolar Transistor, 7A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti | |
2N6109W | MOTOROLA |
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7A, 50V, PNP, Si, POWER TRANSISTOR, TO-220AB | |
2N6109WD | MOTOROLA |
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Power Bipolar Transistor, 7A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti | |
2N6110 | NJSEMI |
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MAXIMUM RATINGS, ABSOLUTE-MAXIMUM VALUOS | |
2N6110 | BOCA |
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EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS | |
2N6110 | SAVANTIC |
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Silicon PNP Power Transistors | |
2N6110 | ISC |
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Silicon PNP Power Transistors |