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2N6107AS PDF预览

2N6107AS

更新时间: 2024-01-22 19:12:35
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关晶体管
页数 文件大小 规格书
60页 371K
描述
7A, 70V, PNP, Si, POWER TRANSISTOR, TO-220AB, 3 PIN

2N6107AS 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:TO-220AB, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.72
外壳连接:COLLECTOR最大集电极电流 (IC):7 A
集电极-发射极最大电压:70 V配置:SINGLE
最小直流电流增益 (hFE):2.3JESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:NO端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):10 MHz
Base Number Matches:1

2N6107AS 数据手册

 浏览型号2N6107AS的Datasheet PDF文件第4页浏览型号2N6107AS的Datasheet PDF文件第5页浏览型号2N6107AS的Datasheet PDF文件第6页浏览型号2N6107AS的Datasheet PDF文件第8页浏览型号2N6107AS的Datasheet PDF文件第9页浏览型号2N6107AS的Datasheet PDF文件第10页 
Table 2. Plastic TO–220AB (continued)  
Device Type  
Resistive Switching  
t
P
D
I Cont  
C
Amps  
Max  
V
t
f
T
MHz  
Min  
(Case)  
Watts  
@ 25°C  
CEO(sus)  
Volts  
Min  
s
f
h
FE  
@ I  
Amp  
@ I  
µs  
C
C
µs  
(8)  
Min/Max  
1k/10k  
1k/10k  
750 min  
1k/10k  
750 min  
1k/20k  
20 min  
20 min  
100 min  
200 min  
15 min  
200 min  
15 min  
200 min  
5/30  
Amp  
Max  
Max  
NPN  
PNP  
(2)  
2N6043  
(2)  
(1)  
(1)  
(1)  
(1)  
8
60  
80  
2N6040  
2N6041  
4
1.5 typ  
1.5 typ  
1.5 typ  
1.5 typ  
3
3
4
4
4
4
75  
75  
60  
75  
(2)  
(2)  
2N6044  
4
(2)  
(2)  
(2)  
(2)  
BDX53B  
BDX54B  
3
(2)  
(2)  
100  
2N6045  
2N6042  
3
1.5 typ  
1.5 typ  
1.5 typ  
1.5 typ  
3
3
BDX53C  
BDX54C  
3
(2)  
(2)  
(1)  
4
TIP102  
TIP107  
3
80  
50  
50  
60  
80  
80  
80  
80  
80  
80  
80  
100  
125  
125  
90  
50  
75  
65  
70  
90  
65  
50  
50  
120  
150  
MJE15028  
MJE15029  
4
30  
30  
MJE15030  
MJE15031  
4
(2)  
200  
BU806  
5
0.55 typ  
8 typ  
2
0.2 typ  
2 typ  
0.5  
5
6
4
6
4
6
5
4
5
2
2
(2)  
300/600  
MJE5740  
MJE5741  
MJE5742  
4
4
MJE5850  
2
(2)  
(2)  
350  
4
8 typ  
2
2 typ  
0.5  
MJE5851  
2
4
8 typ  
3
2 typ  
0.7  
MJE13007  
5
MJE5852  
15 min  
6/22  
2
2
0.5  
400/650  
400/700  
MJE16106  
BUL147  
8
2 typ  
0.1 typ  
(3)  
2.5  
(3)  
14/34  
1
0.18  
0.18  
14 typ  
13 typ  
1.5  
2.75(3)  
(3)  
450/1000  
MJE18008  
16/34  
1
10  
20  
60  
BD808  
15 min  
40 min  
20/70  
4
D44H8  
D45H8  
4
MJE3055T  
MJE2955T  
4
(2)  
(2)  
(1)  
20  
2N6387  
2N6667  
1k/20k  
750 min  
15 min  
1k/20k  
20 min  
40 min  
5
(2)  
(2)  
80  
BDX33B  
BD809  
BDX34B  
BD810  
3
3
4
1.5  
(1)  
(2)  
(2)  
2N6388  
D44H10  
D44H11  
2N6668  
D45H10  
D45H11  
5
20  
4
0.5 typ  
0.5 typ  
0.14 typ  
0.14 typ  
5
5
50 typ  
50 typ  
4
(1)  
|h | @ 1 MHz  
FE  
(2)  
(3)  
(7)  
(8)  
(9)  
Darlington  
Switching tests performed w/special application simulator circuit. See data sheet for details.  
= 375 V  
V
CEO  
When 2 voltages are given, the format is V  
Self protected Darlington  
/V .  
CEO(sus) CES  
Devices listed in bold, italic are Motorola preferred devices.  
Motorola Bipolar Power Transistor Device Data  
Selector Guide  
2–6  

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