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2N6107DW PDF预览

2N6107DW

更新时间: 2024-01-08 18:46:05
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关晶体管
页数 文件大小 规格书
5页 97K
描述
7A, 70V, PNP, Si, POWER TRANSISTOR, TO-220AB, 3 PIN

2N6107DW 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:TO-220AB, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.74
外壳连接:COLLECTOR最大集电极电流 (IC):7 A
集电极-发射极最大电压:70 V配置:SINGLE
最小直流电流增益 (hFE):2.3JESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:NO端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):10 MHz
Base Number Matches:1

2N6107DW 数据手册

 浏览型号2N6107DW的Datasheet PDF文件第2页浏览型号2N6107DW的Datasheet PDF文件第3页浏览型号2N6107DW的Datasheet PDF文件第4页浏览型号2N6107DW的Datasheet PDF文件第5页 
2N6107, 2N6109, 2N6111 (PNP),  
2N6288, 2N6292 (NPN)  
Complementary Silicon  
Plastic Power Transistors  
These devices are designed for use in general−purpose amplifier and  
switching applications.  
http://onsemi.com  
Features  
7 AMPERE  
High DC Current Gain  
High Current Gain − Bandwidth Product  
TO−220 Compact Package  
POWER TRANSISTORS  
COMPLEMENTARY SILICON  
30 − 50 − 70 VOLTS, 40 WATTS  
These Devices are Pb−Free and are RoHS Compliant*  
MAXIMUM RATINGS (Note 1)  
PNP  
NPN  
Rating  
Symbol  
Value  
Unit  
COLLECTOR 2, 4  
COLLECTOR 2, 4  
Collector−Emitter Voltage  
2N6111, 2N6288  
2N6109  
V
CEO  
Vdc  
30  
50  
70  
1
1
2N6107, 2N6292  
BASE  
BASE  
Collector−Base Voltage  
2N6111, 2N6288  
2N6109  
V
CB  
Vdc  
40  
60  
80  
EMITTER 3  
EMITTER 3  
2N6107, 2N6292  
4
Emitter−Base Voltage  
Collector Current − Continuous  
Collector Current − Peak  
Base Current  
V
5.0  
7.0  
10  
Vdc  
Adc  
Adc  
Adc  
EB  
I
C
TO−220  
CASE 221A  
STYLE 1  
I
CM  
I
3.0  
B
Total Power Dissipation  
P
D
1
2
@ T = 25_C  
40  
0.32  
W
W/°C  
C
3
Derate above 25_C  
Operating and Storage Junction  
Temperature Range  
T , T  
−65 to +150  
°C  
J
stg  
MARKING DIAGRAM  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Indicates JEDEC Registered Data.  
2N6xxxG  
AYWW  
THERMAL CHARACTERISTICS  
Characteristics  
Symbol  
Max  
Unit  
Thermal Resistance, Junction−to−Case  
R
3.125  
_C/W  
q
JC  
2N6xxx = Specific Device Code  
xxx  
G
A
= See Table on Page 4  
= Pb−Free Package  
= Assembly Location  
= Year  
Y
WW  
= Work Week  
ORDERING INFORMATION  
See detailed ordering, marking, and shipping information in  
the package dimensions section on page 4 of this data sheet.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
September, 2013 − Rev. 10  
2N6107/D  
 

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