2N60
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
RATINGS
600
UNIT
V
2N60-A
2N60-B
Drain-Source Voltage
650
V
Gate-Source Voltage
VGSS
IAR
±30
V
Avalanche Current (Note 2)
2.0
A
Continuous
Pulsed (Note 2)
ID
2.0
A
Drain Current
IDM
8.0
A
Single Pulsed (Note 3)
Repetitive (Note 2)
EAS
EAR
dv/dt
140
mJ
mJ
V/ns
W
Avalanche Energy
4.5
Peak Diode Recovery dv/dt (Note 4)
TO-220
4.5
54
TO-220F/TO-220F1
23
W
PD
Power Dissipation
TO-251/TO-251L/TO-252
TO-262
44
W
(TC = 25°С)
54
W
TO-126
40
W
Junction Temperature
TJ
+150
-55 ~ +150
-55 ~ +150
°С
°С
°С
Ambient Operating Temperature
Storage Temperature
TOPR
TSTG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ
3. L=64mH, IAS=2.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C
4. ISD≤2.4A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
TO-220
PACKAGE
SYMBOL
RATINGS
62.5
62.5
100
UNIT
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
TO-220F/TO-220F1
TO-251/TO-251L/TO-252
TO-262
Junction to Ambient
θJA
62.5
89
TO-126
TO-220
2.32
5.5
TO-220F/TO-220F1
TO-251/TO-251L/TO-252
TO-262
Junction to Case
θJc
2.87
2.32
3.12
TO-126
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