Datasheet > 2N60I

2N60I

更新时间： 2023-12-06 20:03:06

品牌	Logo	应用领域
鲁光 - LGE		晶体管场效应晶体管
页数	文件大小	规格书
7页	892K
描述
场效应晶体管

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2N60I 数据手册

2N60I/2N60D

2 Amps, 600 Volts N-CHANNEL MOSFET

FEATURES



R_DS(on)=3.8Ω@V_GS=10V.

Ultra Low gate charge (typical 9.0nC)

Low reverse transfer capacitance (Crss = typical 5.0 pF)

Fast switching capability

Avalanche energy specified

Improved dv/dt capability, high ruggedness

TO-251

TO-252

MAXIMUM RATING operating temperature range applies unless otherwise specified

Symbol

Parameter

Value

Units

V_DSS

Drain-Source voltage

600

Drain current continuous

(T_C=25℃) 2.0

I_D

(T_C=100℃) 1.26

Drain current Pulsed (Note2)

Gate -Source voltage

I_DP

8.0

±30

V_GSS

Avalanche Current (Note2)

Avalanche Energy

I_AR

2.0

Repetitive(Note 2)

Single Pulse(Note 3)

E_AR

E_AS

dv/dt

4.5

Avalanche Energy

140

Peak Diode Recovery dv/dt (Note4)

4.5

V/ns

Power Dissipation

(T_C=25℃)

P_D

T_J

Derate above 25℃

0.36

W/℃

Junction Temperature

Storage Temperature

+150

℃

T_STG

θ_JA

-55 ~ +150

112

℃

Thermal Resistance Junction-Ambient

Thermal Resistance Junction-Case

℃/W

θ_Jc

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mail:lge@lgesemi.com

Revision:20170701-P1

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