2N6040 2N6042 2N6043 2N6045
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
P
(pk)
θ
θ
(t) = r(t) θ
JC
JC
JC
= 1.67°C/W
0.1
0.07
0.05
0.05
0.02
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t
1
READ TIME AT t
1
t
2
T
- T = P θ (t)
J(pk)
C
(pk) JC
0.03
0.02
0.01
DUTY CYCLE, D = t /t
1 2
SINGLE PULSE
0.01
0.01
0.02 0.03 0.05
0.1
0.2 0.3 0.5
1.0
2.0 3.0 5.0
10
20 30
50
100
200 300 500
1000
t, TIME OR PULSE WIDTH (ms)
Figure 4. Thermal Response
20
10
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
100 µs
breakdown. Safe operating area curves indicate I – V
C
CE
5.0
500 µs
1.0Ăms
5.0Ăms
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
2.0
1.0
0.5
dc
T = 150°C
J
BONDING WIRE LIMITED
THERMALLY LIMITED @ T = 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
The data of Figure 5 is based on T
variable depending on conditions. Second breakdown pulse
= 150_C; T is
J(pk)
C
C
0.2
0.1
limits are valid for duty cycles to 10% provided T
J(pk)
may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
CURVES APPLY BELOW RATED V
CEO
2N6040, 2N6043
2N6045
< 150_C.
T
J(pk)
0.05
0.02
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
V
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
CE
Figure 5. Active–Region Safe Operating Area
300
10,000
5000
T = 25°C
J
3000
2000
200
1000
500
C
ob
T
= 25°C
= 4.0 Vdc
= 3.0 Adc
C
100
300
200
V
CE
I
C
C
ib
70
50
100
50
PNP
NPN
30
20
PNP
NPN
10
1.0
30
0.1
2.0
5.0 10
20
50 100 200
500 1000
0.2
0.5
1.0 2.0
5.0 10
20
50 100
f, FREQUENCY (kHz)
V , REVERSE VOLTAGE (VOLTS)
R
Figure 7. Capacitance
Figure 6. Small–Signal Current Gain
http://onsemi.com
3