Datasheet > 2N5551G-x-251

2N5551G-x-251

更新时间： 2022-02-26 11:15:08

品牌	Logo	应用领域
BWTECH		高压开关
页数	文件大小	规格书
3页	215K
描述
HIGH VOLTAGE SWITCHING TRANSISTOR

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中文翻译

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数据手册

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2N5551G-x-251 数据手册

ABSOLUTE MAXIMUM RATINGS (Ta=25℃, unless otherwise specified)

PARAMETER

SYMBOL

V_CBO

RATINGS

180

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Dissipation

Collector Current

V_CEO

160

V_EBO

TO-92

625

℃

P_C

SOT-89

500

I_C

T_J

600

Junction Temperature

Storage Temperature

+150

-55 ~ +150

T_STG

℃

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)

PARAMETER

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage BV_CEOI_C=1mA, I_B=0

SYMBOL

TEST CONDITIONS

MIN

180

160

TYP

MAX

UNIT

BV_CBOI_C=100μA, I_E=0

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

BV_EBOI_E=10μA, I_C=0

I_CBO

I_EBO

h_FE1

h_FE2

h_FE3

V_CB=120V, I_E=0

V_BE=4V,I_C=0

V_CE=5V, I_C=1mA

V_CE=5V, I_C=10mA

V_CE=5V, I_C=50mA

DC Current Gain(Note)

160

400

I_C=10mA, I_B=1mA

I_C=50mA, I_B=5mA

0.15

0.2

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

V_CE(SAT)

I_C=10mA, I_B=1mA

I_C=50mA, I_B=5mA

V_BE(SAT)

Current Gain Bandwidth Product

Output Capacitance

f_T

V_CE=10V, I_C=10mA, f=100MHz

V_CB=10V, I_E=0 f=1MHz

I_C=0.25mA, V_CE=5V

R_S=1kΩ, f=10Hz ~ 15.7kHz

100

300

6.0

MHz

C_ob

Noise Figure

Note: Pulse test: PW<300μs, Duty cycle<2%

CLASSIFICATION OF h_FE

RANK

RANGE

80-170

150-240

200-400

123

中文翻译

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