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2N5486_06 PDF预览

2N5486_06

更新时间: 2022-04-23 23:00:11
品牌 Logo 应用领域
安森美 - ONSEMI 放大器
页数 文件大小 规格书
6页 146K
描述
JFET VHF/UHF Amplifiers N−Channel - Depletion

2N5486_06 数据手册

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2N5486  
JFET VHF/UHF Amplifiers  
N−Channel — Depletion  
Features  
Pb−Free Packages are Available*  
http://onsemi.com  
1 DRAIN  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
DrainGate Voltage  
Symbol  
Value  
25  
Unit  
Vdc  
3
GATE  
V
DG  
Reverse GateSource Voltage  
Drain Current  
V
25  
Vdc  
GSR  
2 SOURCE  
I
30  
mAdc  
mAdc  
D
Forward Gate Current  
I
10  
G(f)  
Total Device Dissipation @ T = 25°C  
P
350  
2.8  
mW  
mW/°C  
C
D
Derate above 25°C  
Operating and Storage Junction  
Temperature Range  
T , T  
65 to +150  
°C  
J
stg  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
TO−92 (TO−226AA)  
CASE 29−11  
STYLE 5  
MARKING DIAGRAM  
2N  
5486  
AYWW G  
G
2N5486 = Device Code  
A
Y
= Assembly Location  
= Year  
WW  
G
= Work Week  
= Pb−Free Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
Shipping  
Device  
Package  
2N5486  
TO−92  
1000 Units / Bulk  
1000 Units / Bulk  
2N5486G  
TO−92  
(Pb−Free)  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
October, 2006 − Rev. 2  
2N5486/D  

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