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2N5486L18-1 PDF预览

2N5486L18-1

更新时间: 2024-01-28 15:10:41
品牌 Logo 应用领域
威世 - VISHAY 放大器晶体管
页数 文件大小 规格书
2页 57K
描述
RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET, TO-226AA

2N5486L18-1 技术参数

生命周期:Obsolete包装说明:CYLINDRICAL, O-PBCY-T3
Reach Compliance Code:unknownHTS代码:8541.21.00.95
风险等级:5.56配置:SINGLE
最大漏极电流 (ID):0.03 AFET 技术:JUNCTION
最大反馈电容 (Crss):1 pFJEDEC-95代码:TO-226AA
JESD-30 代码:O-PBCY-T3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:DEPLETION MODE最高工作温度:135 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:N-CHANNEL
最小功率增益 (Gp):10 dB认证状态:Not Qualified
表面贴装:NO端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子位置:BOTTOM
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

2N5486L18-1 数据手册

 浏览型号2N5486L18-1的Datasheet PDF文件第2页 

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