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2N5486RLRP PDF预览

2N5486RLRP

更新时间: 2024-01-24 22:42:11
品牌 Logo 应用领域
安森美 - ONSEMI 晶体放大器晶体管
页数 文件大小 规格书
8页 175K
描述
JFET VHF/UHF Amplifiers, TO-92 (TO-226) 5.33mm Body Height, 2000-FNFLD

2N5486RLRP 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active包装说明:CYLINDRICAL, O-PBCY-T3
Reach Compliance Code:compliant风险等级:5.02
Is Samacsys:N配置:SINGLE
FET 技术:JUNCTION最大反馈电容 (Crss):1 pF
最高频带:ULTRA HIGH FREQUENCY BANDJEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:DEPLETION MODE封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:10
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

2N5486RLRP 数据手册

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ON Semiconductort  
1 DRAIN  
JFET VHF/UHF Amplifiers  
N–Channel — Depletion  
2N5486  
3
GATE  
2 SOURCE  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
25  
Unit  
Vdc  
Drain–Gate Voltage  
Reverse Gate–Source Voltage  
Drain Current  
V
DG  
V
GSR  
25  
Vdc  
I
D
30  
mAdc  
mAdc  
1
Forward Gate Current  
I
10  
G(f)  
2
3
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
350  
2.8  
mW  
mW/°C  
C
CASE 29–11, STYLE 5  
TO–92 (TO–226AA)  
Operating and Storage Junction  
Temperature Range  
T , T  
J stg  
–65 to +150  
°C  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Gate–Source Breakdown Voltage  
V
–25  
Vdc  
(BR)GSS  
(I = –1.0 µAdc, V  
DS  
= 0)  
G
Gate Reverse Current  
I
GSS  
(V  
GS  
(V  
GS  
= –20 Vdc, V  
= –20 Vdc, V  
= 0)  
–1.0  
–0.2  
nAdc  
µAdc  
DS  
DS  
= 0, T = 100°C)  
A
Gate Source Cutoff Voltage  
(V = 15 Vdc, I = 10 nAdc)  
V
Vdc  
GS(off)  
–2.0  
8.0  
–6.0  
20  
DS  
D
ON CHARACTERISTICS  
Zero–Gate–Voltage Drain Current  
I
mAdc  
DSS  
(V  
DS  
= 15 Vdc, V  
= 0)  
GS  
SMALL–SIGNAL CHARACTERISTICS  
Forward Transfer Admittance  
y
mmhos  
mmhos  
mmhos  
mmhos  
mmhos  
fs  
(V  
DS  
= 15 Vdc, V  
= 0, f = 1.0 kHz)  
= 0, f = 400 MHz)  
= 0, f = 1.0 kHz)  
= 0, f = 400 MHz)  
4000  
8000  
1000  
75  
GS  
GS  
GS  
Input Admittance  
(V = 15 Vdc, V  
Re(y )  
is  
DS  
Output Admittance  
(V = 15 Vdc, V  
y
os  
DS  
Output Conductance  
(V = 15 Vdc, V  
Re(y  
)
os  
Re(y  
100  
DS  
Forward Transconductance  
(V = 15 Vdc, V = 0, f = 400 MHz)  
GS  
)
fs  
3500  
DS  
GS  
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
May, 2001 – Rev. 0  
2N5486/D  

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