2N5460RLRF

更新时间： 2024-02-15 14:52:18

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		/
页数	文件大小	规格书
4页	120K
描述
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-92

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技术参数
数据手册

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2N5460RLRF 技术参数

生命周期：	Obsolete	包装说明：	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code：	unknown	风险等级：	5.56
Is Samacsys：	N	配置：	SINGLE
FET 技术：	JUNCTION	最大反馈电容 (Crss)：	3 pF
JEDEC-95代码：	TO-226AA	JESD-30 代码：	O-PBCY-T3
元件数量：	1	端子数量：	3
工作模式：	DEPLETION MODE	封装主体材料：	PLASTIC/EPOXY
封装形状：	ROUND	封装形式：	CYLINDRICAL
极性/信道类型：	P-CHANNEL	认证状态：	Not Qualified
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	BOTTOM	晶体管元件材料：	SILICON
Base Number Matches：	1

2N5460RLRF 数据手册

1000

700

9.0

8.0

f = 1.0 MHz

= 0

= 15 V

f = 1.0 kHz

500

300

200

7.0

6.0

5.0

4.0

3.0

= 3.0 mA

DSS

iss

100

6.0 mA

10 mA

2.0

1.0

oss

rss

0.1

0.2

0.5

1.0

2.0

5.0

V , DRAIN–SOURCE VOLTAGE (VOLTS)

, DRAIN CURRENT (mA)

Figure 7. Output Resistance

versus Drain Current

Figure 8. Capacitance versus

Drain–Source Voltage

5.0

4.0

3.0

2.0

9.0

8.0

7.0

6.0

5.0

4.0

3.0

= 15 V

= 0

= 1.0 Megohm

= 15 V

= 0

f = 100 Hz

1.0

2.0

1.0

20 30 50

100 200 300 500 1000 2000 3000

f, FREQUENCY (Hz)

10,000

1.0

100

1000

10,000

, SOURCE RESISTANCE (k Ohms)

Figure 9. Noise Figure versus Frequency

Figure 10. Noise Figure versus

Source Resistance

COMMON SOURCE

y PARAMETERS FOR FREQUENCIES

BELOW 30 MHz

rss

= jω C

iss

| y | v

fs i

iss

oss

= jω

* + 1/r

osp oss

= y

= –jω C

rss

* C

is C

oss

in parallel with Series Combination of C and C

rss

osp

iss

NOTE:

1. Graphical data is presented for dc conditions. Tabular

dataisgivenforpulsedconditions(PulseWidth=630ms,

Duty Cycle = 10%).

Figure 11. Equivalent Low Frequency Circuit

Motorola Small–Signal Transistors, FETs and Diodes Device Data

1 234

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