Datasheet > 2N5416

2N5416

更新时间： 2024-02-06 16:17:15

品牌	Logo	应用领域
恩智浦 - NXP		晶体晶体管高压
页数	文件大小	规格书
8页	53K
描述
PNP high-voltage transistors

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中文翻译

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技术参数
数据手册

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2N5416 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	unknown
风险等级：	5.74	Base Number Matches：	1

2N5416 数据手册

Philips Semiconductors

Product speciﬁcation

PNP high-voltage transistors

2N5415; 2N5416

FEATURES

PINNING

• Low current (max. 200 mA)

• High voltage (max. 300 V).

DESCRIPTION

emitter

base

APPLICATIONS

collector, connected to case

• Switching and linear amplification in military, industrial

and consumer equipment.

handbook, halfpage

DESCRIPTION

PNP high-voltage transistor in a TO-39 metal package.

MAM334

Fig.1 Simplified outline (TO-39) and symbol.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V_CBO

collector-base voltage

2N5415

open emitter

open base

−

−200

2N5416

−350

V_CEO

collector-emitter voltage

2N5415

−

−200

−300

400

2N5416

I_CM

P_tot

h_FE

peak collector current

total power dissipation

DC current gain

2N5415

_amb≤ 50 °C

I_C= −50 mA; V_CE= −10 V

150

120

−

2N5416

f_T

transition frequency

I_C= −10 mA; V_CE= −10 V; f = 5 MHz

MHz

1997 May 21

123 4 5 6 7 8

中文翻译

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