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2N5401/D PDF预览

2N5401/D

更新时间: 2024-02-12 04:11:50
品牌 Logo 应用领域
其他 - ETC 晶体放大器晶体管
页数 文件大小 规格书
8页 71K
描述
Amplifier Transistors PNP Silicon

2N5401/D 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:ActiveReach Compliance Code:not_compliant
风险等级:5.64基于收集器的最大容量:6 pF
集电极-发射极最大电压:150 V配置:SINGLE
最小直流电流增益 (hFE):60JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e0
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:NO端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzVCEsat-Max:0.5 V
Base Number Matches:1

2N5401/D 数据手册

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2N5401  
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