5秒后页面跳转
2N5172 PDF预览

2N5172

更新时间: 2024-01-27 13:00:15
品牌 Logo 应用领域
SECOS 晶体晶体管
页数 文件大小 规格书
1页 76K
描述
NPN Plastic Encapsulated Transistor

2N5172 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ActiveReach Compliance Code:not_compliant
风险等级:5.36其他特性:LOW NOISE
集电极-发射极最大电压:25 V配置:SINGLE
最小直流电流增益 (hFE):100JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):260
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:10晶体管元件材料:SILICON
标称过渡频率 (fT):200 MHz

2N5172 数据手册

  
2N5172  
0.5 A, 25 V  
NPN Plastic Encapsulated Transistor  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of “-C” specifies halogen & lead-free  
FEATURES  
TO-92  
General Purpose Amplifier Transistor  
G
H
Emitter  
Collector  
Base  
J
A
D
Millimeter  
Collector  
REF.  
Min.  
4.40  
4.30  
12.70  
3.30  
0.36  
0.36  
Max.  
4.70  
4.70  
-
3.81  
0.56  
0.51  
B
  
A
B
C
D
E
F
K
  
Base  
G
H
J
1.27 TYP.  
E
C
F
1.10  
2.42  
0.36  
-
  
Emitter  
2.66  
0.76  
K
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)  
Parameter  
Symbol  
Rating  
Unit  
Collector to Base Voltage  
VCBO  
VCEO  
VEBO  
IC  
25  
V
V
Collector to Emitter Voltage  
Emitter to Base Voltage  
25  
5
0.5  
V
Collector Current - Continuous  
Collector Power Dissipation  
Thermal resistance, junction to ambient  
Junction, Storage Temperature  
A
PC  
625  
mW  
°C / W  
°C  
RθJA  
TJ, TSTG  
200  
150, -55~150  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)  
Parameter  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
Collector to Base Breakdown Voltage  
Collector to Emitter Breakdown Voltage  
Emitter to Base Breakdown Voltage  
Collector Cut-Off Current  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
25  
25  
5
-
-
-
-
-
-
-
-
-
-
V
V
IC=0.01mA, IE=0A  
IC=10mA, IB=0A  
-
V
IE=0.01mA, IC=0A  
VCB=25V, IE=0A  
-
0.1  
0.1  
500  
0.25  
1.2  
μA  
μA  
Emitter Cut-Off Current  
IEBO  
-
VEB= 5V, IC=0mA  
VCE=10V, IC=10mA  
IC=10mA, IB =1mA  
VCE=10V, IC =10mA  
DC Current Gain  
hFE  
100  
-
Collector to Emitter Saturation Voltage  
Base to Emitter Saturation Voltage  
VCE(sat)  
VBE(sat)  
V
V
0.5  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
29-Dec-2010 Rev. A  
Page 1 of 1  

与2N5172相关器件

型号 品牌 获取价格 描述 数据表
2N5172/D10Z TI

获取价格

100mA, 25V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N5172/D11Z TI

获取价格

100mA, 25V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N5172/D26Z TI

获取价格

100mA, 25V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N5172/D27Z TI

获取价格

100mA, 25V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N5172/D74Z TI

获取价格

100mA, 25V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N5172/D75Z TI

获取价格

100mA, 25V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N5172_01 FAIRCHILD

获取价格

NPN General Purpose Amplifier
2N5172-18FLEADFREE CENTRAL

获取价格

Small Signal Bipolar Transistor, 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92-18F,
2N5172-18RLEADFREE CENTRAL

获取价格

Small Signal Bipolar Transistor, 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92-18R,
2N5172-5T CENTRAL

获取价格

Small Signal Bipolar Transistor, 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92-5T, 3