Datasheet > 2N5116HR-PBF

2N5116HR-PBF

更新时间： 2024-01-28 20:26:32

品牌	Logo	应用领域
DIGITRON		/
页数	文件大小	规格书
7页	1194K
描述
Small Signal Field-Effect Transistor

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技术参数
数据手册

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2N5116HR-PBF 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.61	Base Number Matches：	1

2N5116HR-PBF 数据手册

2N5114-2N5116

P-CHANNEL JFETS

High-reliability discrete products

and engineering services since 1977

2N5114

2N5115

2N5116

Unit

Characteristic

Symbol

Min

Max

Min

Max

Min

Max

Drain source on resistance

r_DS(on)

V_GS(F)

r_ds(on)

C_iss

100

150

Ω

V_GS= 0, I_D= -1mA

Gate source forward voltage

-1

100

-1

150

I_G= -1mA, V_DS= 0

Drain source on resistance

Ω

V_GS= 0V, I_D= 0, f = 1kHz

Common source input capacitance

V_DS= -15V, V_GS= 0, f = 1MHz

Common source reverse transfer capacitance

V_DS= 0, V_GS= 12V, f = 1MHz

C_rss

V_DS= 0, V_GS= 7V, f = 1MHz

V_DS= 0, V_GS= 5V, f = 1MHz

Turn on time

Turn off time

t_d(on)

t_r

t_d(off)

t_r

≤ 300µs, duty cycle ≤ 3%.

Note 1: Pulse test: PW

Rev. 20150609

123 4 5 6 7

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