2N5089G-T92-K

更新时间： 2024-01-30 23:43:52

品牌	Logo	应用领域
友顺 - UTC		晶体放大器晶体管
页数	文件大小	规格书
3页	92K
描述
NPN GENERAL PURPOSE AMPLIFIER

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技术参数
数据手册

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2N5089G-T92-K 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.61	Base Number Matches：	1

2N5089G-T92-K 数据手册

2N5088/2N5089

NPN EPITAXIAL SILICON TRANSISTOR

ABSOLUTE MAXIMUM RATING (T_A=25℃, unless otherwise noted)

PARAMETER

SYMBOL

V_CEO

RATINGS

UNIT

2N5088

2N5089

2N5088

2N5089

Collector-Emitter voltage

Collector-Base voltage

V_CBO

Emitter-Base Voltage

Collector Current-Continuous

Power Dissipation

V_EBO

I_C

4.5

100

625

mW/℃

℃

P_D

Derate Above 25℃

Junction Temperature

Storage Temperature

T_J

150

-55 ~ +150

℃

T_STG

Note 1. These ratings are based on a maximum junction temperature of 150 degrees C.

2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty

cycle operations.

3. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA (T_A=25℃, unless otherwise noted)

PARAMETER

SYMBOL

θ_JA

RATINGS

200

UNIT

℃/W

Junction to Ambient

Junction to Case

θ_JC

83.3

ELECTRICAL CHARACTERISTICS (T_A=25℃, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS

MIN

TYP

MAX UNIT

OFF CHARACTERISTICS

Collector-Emitter

Breakdown Voltage

Collector-Base Breakdown

Voltage

2N5088

2N5089

2N5088

2N5089

2N5088

2N5089

V(_BR)CEOI_C=1.0mA, I_B=0 (Note)

V_(BR)CBOI_C=100μA, I_E=0

V_CB=20V, I_E=0

I_CBO

Collector Cut-Off Current

Emitter Cutoff Current

V_CB=15V, I_E=0

V_EB=3.0V, I_C=0

I_EBO

V_EB=4.5V, I_C=0

100

2N5088

2N5089

2N5088

2N5089

2N5088

2N5089

300

400

350

450

300

400

900

V_CE=5.0V, I_C=100μA

1200

DC Current Gain

h_FE

V_CE=5.0V, I_C=1.0mA

V_CE=5.0V, I_C=10mA

(Note)

Collector-Emitter Saturation Voltage

Base-Emitter On Voltage

V_CE(SAT)I_C=10mA, I_B=1.0mA

V_BE(ON)I_C=10mA, V_CE=5.0V

0.5

0.8

SMALL SIGNAL CHARACTERISTICS

Current Gain-Bandwidth Product

Collector-Base Capacitance

f_T

V_CE=5.0mA, I_C=500μA, f=20MHz

V_CB=5.0V, I_E=0, f=100kHz

V_EB=0.5V, I_C=0, f=100kHz

MHz

C_CB

C_EB

Emitter-Base Capacitance

2N5088

Small-Signal Current Gain

2N5089

350

450

1400

1800

3.0

h_FE

V_CE=5.0V, I_C=1.0mA, f=1.0kHz

2N5088

V_CE=5.0V, I_C=100μA, R_S=10kΩ,

Noise Figure

2N5089

f=10KHz ~ 15.7kHz

2.0

Note Pulse Test: Pulse Width≤300μs, Duty Cycle≤2.0%

UNISONIC TECHNOLOGIES CO., LTD

2 of 3

QW-R201-040.Ba

www.unisonic.com.tw

123

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