2N5088
2N5089
MMBT5088
MMBT5089
C
E
TO-92
C
B
B
SOT-23
Mark: 1Q / 1R
E
NPN General Purpose Amplifier
This device is designed for low noise, high gain, general purpose
amplifier applications at collector currents from 1µA to 50 mA.
Absolute Maximum Ratings*
TA= 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
Collector-Base Voltage
30
25
35
30
4.5
V
V
V
V
V
2N5088
2N5089
2N5088
2N5089
VCBO
VEBO
IC
Emitter-Base Voltage
Collector Current - Continuous
100
mA
Operating and Storage Junction Temperature Range
-55 to +150
C
°
TJ, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA= 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
2N5088
2N5089
*MMBT5088
*MMBT5089
PD
Total Device Dissipation
Derate above 25 C
625
5.0
350
2.8
mW
mW/ C
°
°
Thermal Resistance, Junction to Case
83.3
Rθ
C/W
°
JC
Thermal Resistance, Junction to Ambient
200
357
Rθ
C/W
°
JA
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
2001 Fairchild Semiconductor Corporation
2N5088/2N5089/MMBT5088/MMBT5089, Rev A