Datasheet > 2N4900-PBF

2N4900-PBF

更新时间： 2023-02-26 15:18:32

品牌	Logo	应用领域
DIGITRON		/
页数	文件大小	规格书
5页	1495K
描述
Power Bipolar Transistor

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数据手册

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2N4900-PBF 数据手册

2N4898-2N4900

PNP SILICON MEDIUM POWER TRANSISTORS

High-reliability discrete products

and engineering services since 1977

FEATURES



Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.

MAXIMUM RATINGS

Rating

Symbol

V_CEO

2N4898

2N4899

2N4900

Unit

Vdc

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

V_CB

V_EB

5.0

1.0

4.0

Collector current – continuous

Base current

I_C

I_B

Adc

1.0

Total device dissipation T_C= 25°C

Derate above 25°C

Watts

W/°C

P_D

0.143

Operating and storage junction temperature range

Thermal resistance, junction to case

T_J, T_stg

Ө_JC

-65 to +200

7.0

°C

°C/W

The 4.0 amp maximum value is based upon actual current-handling capability of the device.

ELECTRICAL CHARACTERSITICS (T_A= 25°C unless otherwise specified)

Characteristics

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector emitter sustaining voltage

(I_C= 0.1Adc, I_B= 0)

2N4898

2N4899

2N4900

B_VCEO(sus)

Vdc

Collector cutoff current

(V_CE= 20Vdc, I_B= 0)

(V_CE= 30Vdc, I_B– 0)

(V_CE= 40Vdc, I_B= 0)

2N4898

2N4899

2N4900

0.5

I_CEO

mAdc

Collector cutoff current

(V_CE= rated V_CEO, V_BE(off)= 1.5Vdc)

(V_CE= rated V_CEO, V_BE(off)= 1.5Vdc, T_C= 150°C)

I_CEX

0.1

1.0

Collector cutoff current

I_CBO

mAdc

(V_CB= rated V_CB, I_E= 0)

0.1

1.0

Emitter cutoff current

I_EBO

(V_BE= 5.0Vdc, I_C= 0)

ON CHARACTERISTICS

DC current gain ⁽¹⁾

(I_C= 50mAdc, V_CE= 1.0Vdc)

(I_C= 500mAdc, V_CE= 1.0Vdc)

(I_C= 1.0Adc, V_CE= 1.0Vdc)

100

(1)

h_FE

Collector emitter saturation voltage

(1)

V_CE(sat)

Vdc

(I_C= 1.0Adc, I_B= 0.1Adc)

0.6

1.3

Base emitter saturation voltage

(1)

V_BE(sat)

(I_C= 1.0Adc, I_B= 0.1Adc)

Rev. 20150721

12 3 4 5

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