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2N4901_12 PDF预览

2N4901_12

更新时间: 2022-05-21 04:10:00
品牌 Logo 应用领域
COMSET 晶体晶体管
页数 文件大小 规格书
3页 84K
描述
PNP SILICON TRANSISTORS, EPITAXIAL BASE

2N4901_12 数据手册

 浏览型号2N4901_12的Datasheet PDF文件第2页浏览型号2N4901_12的Datasheet PDF文件第3页 
2N4901 – 2N4902 – 2N4903  
PNP SILICON TRANSISTORS, EPITAXIAL BASE  
The 2N4901, 2N4902, 2N4903 are mounted in Jedec TO-66 metal case.  
They are intended for general–purpose switching and power amplifier applications.  
Compliance to RoHS.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCBO  
Ratings  
Value  
Unit  
2N4901  
2N4902  
2N4903  
2N4901  
2N4902  
2N4903  
2N4901  
2N4902  
2N4903  
-40  
-60  
-80  
-40  
-60  
-80  
-40  
-60  
-80  
-5.0  
-40  
-60  
-80  
-5  
Collector to Base Voltage  
V
VCEO  
#Collector-Emitter Voltage  
V
VCER  
VEBO  
VCEX  
Collector-Emitter Voltage  
V
V
V
Emitter-Base Voltage  
2N4901  
2N4902  
2N4903  
Collector-Base Voltage VBE=1.5 V  
Collector Current – Continuous  
IC  
A
A
Collector  
Current – Peak  
ICM  
tp=5 ms  
-10  
IB  
Base Current – Continuous  
-1  
A
PTOT  
TJ  
TSTG  
Power Dissipation  
Junction Temperature  
Storage Temperature  
87.5  
200  
-65 to +200  
W
°C  
°C  
THERMAL CHARACTERISTICS  
Symbol  
Ratings  
Value  
Unit  
RthJC  
RthJA  
Thermal Resistance, Junction to Case  
Junction to Free Air Thermal Resistance  
2
°C/W  
°C/W  
47.3  
17/10/2012  
COMSET SEMICONDUCTORS  
1 3  

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