Datasheet > 2N4901

2N4901

更新时间： 2024-11-28 07:28:43

品牌	Logo	应用领域
锦美电子 - JMNIC		晶体晶体管局域网
页数	文件大小	规格书
3页	47K
描述
Silicon PNP Power Transistors

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2N4901 数据手册

Product Specification

www.jmnic.com

Silicon PNP Power Transistors

2N4901 2N4902 2N4903

DESCRIPTION

·With TO-3 package

·Complement to type 2N5067,2N5068,2N5069

·Low collector-emitter saturation voltage

APPLICATIONS

·For general–purpose switching

and power amplifier applications.

PINNING

DESCRIPTION

Base

Emitter

Collector

Fig.1 simplified outline (TO-3) and symbol

Absolute maximum ratings(Ta=℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

2N4901

2N4902

2N4903

2N4901

2N4902

2N4903

V_CBO

Collector-base voltage

Open emitter

V_CEO

Collector-emitter voltage

Open base

V_EBO

I_C

I_CM

I_B

Emitter-base voltage

Collector current

Open collector

Collector current-peak

Base current

P_C

T_j

Collector power dissipation

Junction temperature

Storage temperature

T_C=25℃

87.5

150

-65~200

℃

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

R_{th j-c}

Thermal resistance junction to case

2.0

℃/W

12 3

中文翻译

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2N4901_12	COMSET	获取价格	PNP SILICON TRANSISTORS, EPITAXIAL BASE
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2N4901SMD	SEME-LAB	获取价格	Bipolar PNP Device in a Hermetically sealed
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2N4902	JMNIC	获取价格	Silicon PNP Power Transistors
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