Datasheet > 2N4400J18Z

2N4400J18Z

更新时间： 2023-03-15 00:00:00

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
16页	515K
描述
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN

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2N4400J18Z 数据手册

NPN General Purpose Amplifier

(continued)

Electrical Characteristics

TA = 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Max

Units

OFF CHARACTERISTICS

V_(BR)CEO

V_(BR)CBO

V_(BR)EBO

I_CEX

Collector-Emitter Breakdown Voltage* I_C= 1.0 mA, I_B= 0

Collector-Base Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

I = 100 A, I = 0

6.0

I = 100 A, I = 0

V_CE= 35 V, V_EB= 0.4 V

0.1

I_BL

Emitter Cutoff Current

ON CHARACTERISTICS*

h_FE

DC Current Gain

V_CE= 1.0 V, I_C= 1.0 mA

V_CE= 1.0 V, I_C= 10 mA

V_CE= 1.0 V, I_C= 150 mA

V_CE= 2.0 V, I_C= 500 mA

150

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

I_C= 150 mA, I_B=15 mA

I_C= 500 mA, I_B= 50 mA

I_C= 150 mA, I_B=15 mA

I_C= 500 mA, I_B= 50 mA

0.40

0.75

0.95

1.2

V_CE(sat)

V_BE(sat)

0.75

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

V_CB= 5.0 V, f = 140 kHz

V_EB= 0.5 V, f = 140 kHz

6.5

C_ob

C_ib

h_fe

Input Capacitance

Small-Signal Current Gain

I_C= 20 mA, V_CE= 10 V,

f = 100 MHz

2.0

Small-Signal Current Gain

Input Impedance

V_CE= 10 V, I_C= 1.0 mA,

0.5

0.1

1.0

250

7.5

8.0

h_fe

h_ie

h_re

h_oe

f = 1.0 kHz

x 10^-4

Ω

Voltage Feedback Ratio

Output Admittance

mhos

SWITCHING CHARACTERISTICS

Delay Time

Rise Time

Storage Time

Fall Time

V_CC= 30 V, I_C= 150 mA,

I_B1= 15 mA ,V_EB= 2 V

V_CC= 30 V, I_C= 150 mA

I_B1= I_B2= 15 mA

t_d

t_r

225

t_s

t_f

*^{Pulse Test: Pulse Width £300 ms, Duty Cycle £2.0%}

123 4 5 6 7...16

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