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2N4393

更新时间： 2024-01-21 07:24:23
品牌 Logo 应用领域
MICROSS 晶体晶体管开关
页数 文件大小 规格书
1页 299K
描述
Linear Systems replaces discontinued Siliconix

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2N4393 技术参数

是否Rohs认证： 不符合生命周期：Active
包装说明：SMALL OUTLINE, R-CDSO-N6Reach Compliance Code：compliant
HTS代码：8541.21.00.95风险等级：5.7
其他特性：HIGH RELIABILITY配置：SEPARATE, 2 ELEMENTS
最大漏源导通电阻：100 ΩFET 技术：JUNCTION
最大反馈电容 (Crss)：5 pFJESD-30 代码：R-CDSO-N6
元件数量：2端子数量：6
工作模式：DEPLETION MODE最高工作温度：150 °C
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL认证状态：Not Qualified
表面贴装：YES端子形式：NO LEAD
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管元件材料：SILICONBase Number Matches：1

2N4393 数据手册

  
2N4393  
Single N-Channel JFET switch  
Linear Systems replaces discontinued Siliconix 2N4393  
FEATURES  
The 2N4393 features many of the superior  
DIRECT REPLACEMENT FOR SILICONIX 2N4393  
LOW ON RESISTANCE  
characteristics of JFETs which make it a good choice  
for demanding analog switching applications and for  
specialized amplifier circuits.  
rDS(on) ≤ 100Ω  
ID(off) = 5pA  
t(ON) ≤= 15ns  
LOW GATE OPERATING CURRENT  
FAST SWITCHING  
2N4393 Benefits:  
ABSOLUTE MAXIMUM RATINGS1 @ 25°C (unless otherwise noted)  
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Low Error Voltage  
Maximum Temperatures  
Storage Temperature  
Operating Junction Temperature  
Maximum Power Dissipation  
Continuous Power Dissipation  
MAXIMUM CURRENT  
Gate Current (Note 1)  
MAXIMUM VOLTAGES  
Gate to Drain Voltage / Gate to Source Voltage  
High-Speed Analog Circuit Performance  
Negligible “Off-Error,” Excellent Accuracy  
Good Frequency Response, Low Glitches  
Eliminates Additional Buffering  
‐65°C to +200°C  
‐55°C to +200°C  
1800mW  
IG = 50mA  
‐40V  
2N4393 Applications:  
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Analog Switches  
Choppers, Sample-and-Hold  
Normally “On” Switches, Current Limiters  
2N4393 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)  
SYMBOL  
BVGSS  
VGS(off)  
VGS(F)  
VDS(on)  
VDS(on)  
VDS(on)  
IDSS  
CHARACTERISTIC  
Gate to Source Breakdown Voltage  
Gate to Source Cutoff Voltage  
Gate to Source Forward Voltage  
Drain to Source On Voltage  
Drain to Source On Voltage  
Drain to Source On Voltage  
Drain to Source Saturation Current2  
Gate Reverse Current  
MIN  
‐40  
‐0.5  
‐‐  
‐‐  
‐‐  
‐‐  
5
‐‐  
‐‐  
TYP.  
‐‐  
‐‐  
0.7  
0.25  
0.3  
0.35  
‐‐  
‐5  
‐5  
5
5
MAX  
‐‐  
‐3  
1
0.4  
‐‐  
UNITS  
V
CONDITIONS  
IG = ‐1µA, VDS = 0V  
VDS = 20V, ID = 1nA  
IG = 1mA, VDS = 0V  
VGS = 0V, ID = 3mA  
VGS = 0V, ID = 6mA  
VGS = 0V, ID = 12mA  
VDS = 20V, VGS = 0V  
VGS = ‐20V, VDS = 0V  
VDG = 15V, ID = 10mA  
‐‐  
30  
‐100  
‐‐  
100  
‐‐  
mA  
pA  
IGSS  
IG  
Gate Operating Current  
‐‐  
‐‐  
‐‐  
‐‐  
VDS = 20V, VGS = ‐5V  
ID(off)  
Drain Cutoff Current  
VDS = 20V, VGS = ‐7V  
VDS = 20V, VGS = ‐12V  
VGS = 0V, ID = 1mA  
5
‐‐  
‐‐  
100  
rDS(on)  
Drain to Source On Resistance  
Ω
2N4393 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)  
SYMBOL  
CHARACTERISTIC  
TYP  
MIN  
MAX  
UNITS  
CONDITIONS  
Click To Buy  
gfs  
Forward Transconductance  
6
‐‐  
‐‐  
‐‐  
‐‐  
‐‐  
‐‐  
‐‐  
‐‐  
‐‐  
mS  
µS  
Ω
VDS = 20V, ID = 1mA, f = 1kHz  
VDS = 20V, ID = 1mA, f = 1kHz  
VGS = 0V, ID = 0A, f = 1kHz  
gos  
Output Conductance  
25  
‐‐  
‐‐  
rds(on)  
Ciss  
Drain to Source On Resistance  
Input Capacitance  
100  
14  
3.5  
‐‐  
12  
3.3  
3.2  
2.8  
3
VDS = 20V, VGS = 0V, f = 1MHz  
VDS = 0V, VGS = ‐5V, f = 1MHz  
VDS = 0V, VGS = ‐7V, f = 1MHz  
VDS = 0V, VGS = ‐12V, f = 1MHz  
VDS = 10V, ID = 10mA, f = 1kHz  
Crss  
pF  
Reverse Transfer Capacitance  
Crss  
Crss  
‐‐  
en  
Equivalent Input Noise Voltage  
‐‐  
nV/√Hz  
2N4393 SWITCHING ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)  
SYMBOL  
td(on)  
tr  
CHARACTERISTIC  
TYP  
2
MIN  
‐‐  
MAX  
15  
5
UNITS  
CONDITIONS  
Turn On Time  
2
‐‐  
ns  
VDD = 10V, VGS(H) = 0V  
td(off)  
tf  
6
‐‐  
50  
30  
Turn Off Time  
13  
‐‐  
Notes: 1. Absolute ratings are limiting values above which serviceability may be impaired  
2. Pulse test: PW ≤ 300µs, Duty Cycle ≤ 3%  
2N4393 SWITCHING CIRCUIT PARAMETERS  
SWITCHING CIRCUIT  
VGS(L)  
RL  
‐5V  
3200Ω  
3mA  
TO-18 (Bottom View)  
Micross Components Europe  
ID(on)  
Available Packages:  
Tel: +44 1603 788967  
Email: chipcomponents@micross.com  
Web: http://www.micross.com/distribution  
2N4393 in TO-18  
2N4393 in bare die.  
Contact Micross for full package and die dimensions  
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or  
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.  
1

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