Datasheet > 2N4124J05Z

2N4124J05Z

更新时间： 2023-01-03 08:11:26

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
16页	528K
描述
Small Signal Bipolar Transistor, 0.2A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN

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2N4124J05Z 数据手册

NPN General Purpose Amplifier

(continued)

Electrical Characteristics

TA= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Max

Units

OFF CHARACTERISTICS

V_(BR)CEO

V_(BR)CBO

V_(BR)EBO

I_CBO

Collector-Emitter Breakdown Voltage

I_C= 1.0 mA, I_B= 0

I = 10 A, I = 0

Collector-Base Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

5.0

I = 10 A, I = 0

V_CB= 20 V, I_E= 0

V_EB= 3.0 V, I_C= 0

I_EBO

Emitter Cutoff Current

ON CHARACTERISTICS*

h_FE

DC Current Gain

I_C= 2.0 mA, V_CE= 1.0 V

I_C= 50 mA, V_CE= 1.0 V

I_C= 50 mA, I_B= 5.0 mA

120

360

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

0.3

V_CE(sat)

V_BE(sat)

I_C= 50 mA, I_B= 5.0 mA

0.95

SMALL SIGNAL CHARACTERISTICS

f_T

Current Gain - Bandwidth Product

I_C= 10 mA, V_CE= 20 V,

f = 100 MHz

V_CB= 5.0 V, I_E= 0,

f = 100 kHz

V_BE= 0.5 V, I_C= 0,

f = 1.0 kHz

V_CB= 5.0 V, I_E= 0,

f = 100 kHz

300

120

MHz

Output Capacitance

4.0

8.0

4.0

480

5.0

C_obo

C_ibo

C_cb

h_fe

Input Capacitance

Collector-Base Capcitance

Small-Signal Current Gain

Noise Figure

V_CE= 10 V, I_C= 2.0 mA,

f = 1.0 kHz

I = 100 A, V_CE= 5.0 V,

R =1.0k , f=10 Hz to 15.7 kHz

Ω

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

123 4 5 6 7...16

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