Datasheet > 2N4123_08

2N4123_08

更新时间： 2022-09-16 12:15:47

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
6页	116K
描述
General Purpose Transistors

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数据手册

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2N4123_08 数据手册

2N4123, 2N4124

1.0

0.8

0.6

0.4

0.2

T = 25°C

30 mA

100 mA

= 1 mA

10 mA

0.01

0.02

0.03

0.05 0.07 0.1

0.2

0.3

0.5

0.7

1.0

2.0

3.0

5.0

7.0

I , BASE CURRENT (mA)

Figure 10. Collector Saturation Region

1.2

1.0

T = 25°C

@ I /I = 10

C B

0.5

BE(sat)

+25°C to +125°C

-ꢀ55°C to +25°C

for V

CE(sat)

0.8

@ V = 1 V

-ꢀ0.5

-ꢀ1.0

-ꢀ1.5

-ꢀ2.0

0.6

0.4

0.2

-ꢀ55°C to +25°C

+25°C to +125°C

@ I /I = 10

C B

CE(sat)

for V

BE(sat)

1.0

2.0

5.0

100

200

80 100 120 140 160 180 200

I , COLLECTOR CURRENT (mA)

Figure 11. “On” Voltages

Figure 12. Temperature Coefficients

http://onsemi.com

1 2 3 456

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