Datasheet > 2N4123_08

2N4123_08

更新时间： 2022-09-16 12:15:47

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
6页	116K
描述
General Purpose Transistors

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2N4123_08 数据手册

2N4123, 2N4124

h PARAMETERS

(V_CE= 10 V, f = 1 kHz, T_A= 25°C)

300

200

100

5.0

0.1

0.2

0.5

1.0

2.0

0.1

0.2

0.5

1.0

2.0

I , COLLECTOR CURRENT (mA)

Figure 5. Current Gain

Figure 6. Output Admittance

7.0

5.0

2.0

3.0

2.0

1.0

0.5

1.0

0.7

0.5

0.2

0.1

0.2

0.5

1.0

2.0

5.0

0.1

0.2

0.5

1.0

2.0

5.0

I , COLLECTOR CURRENT (mA)

Figure 7. Input Impedance

Figure 8. Voltage Feedback Ratio

STATIC CHARACTERISTICS

2.0

1.0

T = +125°C

= 1 V

+25°C

-ꢀ55°C

0.7

0.5

0.3

0.2

0.1

0.2

0.3

0.5 0.7

1.0

2.0

3.0

5.0 7.0 10

70 100

200

I , COLLECTOR CURRENT (mA)

Figure 9. DC Current Gain

http://onsemi.com

1 2 345 6

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