WILLAS
2N4003NLT1
Small Signal MOSFET
30V,0.56A, Single,SOT-23
Gate
ESD Protection,
N−Channel
Features
• Low Gate Voltage Threshold(Vgs(th))to Facilitate Drive Circuit Design
• Low Gate Charge for Fast Switching
• ESD Protected Gate
• Minimum Breakdown Voltage Rating of 30 V
Pb-Free package is available
•
RoHS product for packing code suffix ”G”
SOT-23
Halogen free product for packing code suffix “H”
Applications
• Level Shifters
• Level Switches
Drain
3
• Low Side Load Switches
• Portable Applications
1
Gate
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol Value
Unit
V
2
V
30
20
DSS
Source
Gate−to−Source Voltage
V
GS
V
Continuous Drain
Current (Note 1)
Steady T = 25°C
I
0.5
A
A
D
State
T = 85°C
A
0.37
0.69
Power Dissipation
(Note 1)
Steady State
P
W
A
D
MARKING DIAGRAM
3
Drain
Continuous Drain
Current (Note 1)
t < 10 s T = 25°C
I
D
0.56
0.40
0.83
A
T = 85°C
A
TR8
Power Dissipation
(Note 1)
t < 5 s
P
W
D
Pulsed Drain Current
t = 10 ms
I
1.7
A
p
DM
1
2
Gate
Source
Operating Junction and Storage Temperature
T ,
−55 to
150
°C
J
Tstg
TR8
M
= Specific Device Code
= Month Code
Source Current (Body Diode)
I
S
1.0
A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260
°C
ORDERING INFORMATION
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
Device
2N4003NLT1
Package
Shipping
3000/Tape & Reel
SOT−23
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
180
150
300
Unit
Junction−to−Ambient − Steady State (Note 1)
Junction−to−Ambient − t < 10 s (Note 1)
Junction−to−Ambient − Steady State (Note 2)
°C/W
R
q
q
q
JA
JA
JA
R
R
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2. Surface−mounted on FR4 board using the minimum recommended pad size.
2012-10
WILLAS ELECTRONIC CORP.