2N3904TAR

更新时间： 2024-02-04 04:38:20

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
11页	343K
描述
40 V NPN General Purpose Bipolar Junction Transistor, 2000-FNFLD

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技术参数
数据手册

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2N3904TAR 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

2N3904TAR 数据手册

NPN General Purpose Amplifier

(continued)

Typical Characteristics (continued)

Storage Time vs Collector Current

Fall Time vs Collector Current

500

100

I_B1= I_B2

= 25°C

= 125°C

V_CC= 40V

100

= 125°C

= 25°C

100

- COLLECTOR CURRENT (mA)

100

- COLLECTOR CURRENT (mA)

Current Gain

Output Admittance

500

100

= 10 V

f = 1.0 kHz

= 25^oC

0.1

I _C- COLLECTOR CURRENT (mA)

Input Impedance

Voltage Feedback Ratio

100

= 10 V

f = 1.0 kHz

= 25^oC

0.1

I_C- COLLECTOR CURRENT (mA)

I _C- COLLECTOR CURRENT (mA)

1 2 3 456 7 8...11

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2N3904TFR	ROCHESTER	Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,	获取价格
2N3904TFR	ONSEMI	200 mA, 40 V NPN General Purpose Bipolar Junction Transistor	获取价格