2N3904RLRMG

更新时间： 2024-01-12 15:39:39

品牌	Logo	应用领域
安森美 - ONSEMI		晶体小信号双极晶体管
页数	文件大小	规格书
11页	343K
描述
General Purpose Transistors NPN Silicon

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技术参数
数据手册

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2N3904RLRMG 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

2N3904RLRMG 数据手册

NPN General Purpose Amplifier

(continued)

Typical Characteristics (continued)

Noise Figure vs Frequency

Noise Figure vs Source Resistance

= 1.0 mA

V _CE= 5.0V

= 1.0 mA

= 200Ω

= 50 µA

= 1.0 kΩ

= 5.0 mA

= 50 µA

= 0.5 mA

= 200Ω

= 100 µA

= 100 µA, R = 500 Ω

0.1

100

0.1

100

f - FREQUENCY (kHz)

- SOURCE RESISTANCE (

)

kΩ

Power Dissipation vs

Ambient Temperature

Current Gain and Phase Angle

vs Frequency

0.75

0.5

h _fe

SOT-223

100

120

TO-92

SOT-23

140

160

180

V_CE= 40V

0.25

I _C= 10 mA

100

1000

100

125

150

f - FREQUENCY (MHz)

TEMPERATURE (^oC)

Turn-On Time vs Collector Current

Rise Time vs Collector Current

500

100

I_B1= I_B2

V_CC= 40V

I_B1= I_B2=

40V

15V

100

= 25°C

@ V_CC= 3.0V

= 125°C

2.0V

@ V_CB= 0V

- COLLECTOR CURRENT (mA)

100

- COLLECTOR CURRENT (mA)

100

1 2 345 6 7...11

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