2N3904RL1G

更新时间： 2024-02-27 20:39:12

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
11页	343K
描述
General Purpose Transistors NPN Silicon

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数据手册

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2N3904RL1G 数据手册

NPN General Purpose Amplifier

(continued)

Typical Characteristics

Typical Pulsed Current Gain

Collector-Emitter Saturation

Voltage vs Collector Current

vs Collector Current

500

400

300

200

100

V _CE= 5V

0.15

0.1

= 10

125 °C

25 °C

0.05

- 40 °C

0.1

100

0.1

100

I _C- COLLECTOR CURRENT (mA)

Base-Emitter Saturation

Voltage vs Collector Current

Base-Emitter ON Voltage vs

Collector Current

0.8

0.6

0.4

0.2

= 5V

= 10

- 40 °C

0.8

0.6

0.4

25 °C

125 °C

0.1

100

0.1

100

I _C- COLLECTOR CURRENT (mA)

Capacitance vs

Reverse Bias Voltage

Collector-Cutoff Current

vs Ambient Temperature

500

f = 1.0 MHz

V_CB= 30V

100

ibo

0.1

obo

0.1

100

125

150

100

T_A- AMBIENT TEMPERATURE ( C)

REVERSE BIAS VOLTAGE (V)

1 234 5 6 7...11

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