Datasheet > 2N3904

2N3904

更新时间： 2024-11-24 07:28:31

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描述
NPN EPITAXIAL PLANAR TRANSISTOR

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数据手册

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2N3904 数据手册

TIGER ELECTRONIC CO.,LTD

2N3904

NPN EPITAXIAL PLANAR TRANSISTOR

Description

The 2N3904 is designed for general purpose switching and

amplifier applications.

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature............................................................................................... -55~+150°C

Junction Temperature..................................................................................... +150°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25°C) ............................................................................... 625 mW

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage ......................................................................................... 60 V

VCEO Collector to Emitter Voltage...................................................................................... 40 V

VEBO Emitter to Base Voltage ........................................................................................... 6.0 V

IC Collector Current ....................................................................................................... 200 mA

(Ta=25°C)

Characteristics

Symbol

BVCBO

BVCEO

BVEBO

ICEX

VCE(sat)1

VCE(sat)2

VBE(sat)1

VBE(sat)2

hFE1

Min.

6.0

Typ.

Max.

Unit

Test Conditions

IC=10uA, IE=0

IC=1mA, IB=0

IE=10uA, IC=0

200

300

850

950

VCE=30V, VBE=3V

IB=1mA, IC=10mA

IB=5mA, IC=50mA

IB=1mA, IC=10mA

IB=5mA, IC=50mA

VCE=1V, IC=100uA

VCE=1V, IC=1mA

VCE=1V, IC=10mA

VCE=1V, IC=50mA

VCE=1V, IC=100mA

IC=10mA, VCE=20V, f=100MHz

VCB=5V, f=1MHz, IE=0

650

100

300

hFE2

hFE3

hFE4

hFE5

Cob

300

MHz

4.0

TIGER ELECTRONIC CO.,LTD

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中文翻译

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