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2N3904 PDF预览

2N3904

更新时间: 2024-11-09 07:28:31
品牌 Logo 应用领域
可天士 - KODENSHI 晶体晶体管
页数 文件大小 规格书
4页 163K
描述
NPN Silicon Transistor

2N3904 数据手册

 浏览型号2N3904的Datasheet PDF文件第2页浏览型号2N3904的Datasheet PDF文件第3页浏览型号2N3904的Datasheet PDF文件第4页 
2N3904  
NPN Silicon Transistor  
Descriptions  
General small signal application  
Switching application  
PIN Connection  
C
E
Features  
Low collector saturation voltage  
Collector output capacitance  
Complementary pair with 2N3906  
B
TO-92  
Ordering Information  
Type NO.  
Marking  
Package Code  
2N3904  
2N3904  
TO-92  
Absolute maximum ratings  
Characteristic  
Ta=25°C  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
60  
Unit  
Collector-Base voltage  
Collector-Emitter voltage  
Emitter-base voltage  
Collector current  
V
V
40  
6
V
200  
mA  
mW  
°C  
Collector dissipation  
PC  
625  
Junction temperature  
Storage temperature range  
Tj  
150  
Tstg  
-55~150  
°C  
Electrical Characteristics  
Characteristic  
Ta=25°C  
Symbol  
BVCBO  
BVCEO  
BVEBO  
ICEX  
Test Condition  
IC=10μA, IE=0  
Min. Typ. Max. Unit  
Collector-Base breakdown voltage  
Collector-Emitter breakdown voltage  
Emitter-Base breakdown voltage  
Collector cut-off current  
60  
40  
6
-
-
-
-
-
-
-
V
IC=1mA, IB=0  
-
V
IE=10μA, IC=0  
-
V
VCE=30V, VEB=3V  
VCE=1V, IC=10mA  
IC=50mA, IB=5mA  
-
50  
300  
0.3  
nA  
-
DC current gain  
hFE  
100  
-
Collector-Emitter saturation voltage  
VCE(sat)  
V
VCE=20V, IC=10mA,  
f=100MHz  
Transition frequency  
fT  
300  
-
-
MHz  
Collector output capacitance  
Delay time  
Cob  
td  
tr  
VCB=5V, IE=0, f=1MHz  
-
-
-
-
-
-
-
-
-
-
4
pF  
ns  
ns  
ns  
ns  
35  
35  
200  
50  
VCC=3Vdc, VBE(off)=0.5Vdc.  
IC=10mAdc, IB1=1mAdc  
Rise time  
Storage time  
Fall Time  
ts  
VCC=3Vdc,IC=10mAdc,  
IB1=IB2=1mAdc  
tf  
KSD-T0A033-000  
1

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