Datasheet > 2N3904

2N3904

更新时间： 2024-11-20 07:28:31

品牌	Logo	应用领域
可天士 - KODENSHI		晶体晶体管
页数	文件大小	规格书
4页	163K
描述
NPN Silicon Transistor

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中文翻译

获取价格

数据手册

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2N3904 数据手册

2N3904

NPN Silicon Transistor

Descriptions

• General small signal application

• Switching application

PIN Connection

Features

• Low collector saturation voltage

• Collector output capacitance

• Complementary pair with 2N3906

TO-92

Ordering Information

Type NO.

Marking

Package Code

2N3904

TO-92

Absolute maximum ratings

Characteristic

Ta=25°C

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

Unit

Collector-Base voltage

Collector-Emitter voltage

Emitter-base voltage

Collector current

200

°C

Collector dissipation

P_C

625

Junction temperature

Storage temperature range

T_j

150

T_stg

-55~150

°C

Electrical Characteristics

Characteristic

Ta=25°C

Symbol

BV_CBO

BV_CEO

BV_EBO

I_CEX

Test Condition

I_C=10μA, I_E=0

Min. Typ. Max. Unit

Collector-Base breakdown voltage

Collector-Emitter breakdown voltage

Emitter-Base breakdown voltage

Collector cut-off current

I_C=1mA, I_B=0

I_E=10μA, I_C=0

V_CE=30V, V_EB=3V

V_CE=1V, I_C=10mA

I_C=50mA, I_B=5mA

300

0.3

DC current gain

h_FE

100

Collector-Emitter saturation voltage

V_CE(sat)

V_CE=20V, I_C=10mA,

f=100MHz

Transition frequency

f_T

300

MHz

Collector output capacitance

Delay time

C_ob

t_d

t_r

V_CB=5V, I_E=0, f=1MHz

200

V_CC=3V_dc, V_BE(off)=0.5V_dc.

I_C=10mA_dc, I_B1=1mA_dc

Rise time

Storage time

Fall Time

t_s

V_CC=3V_dc,I_C=10mA_dc,

I_B1=I_B2=1mA_dc

t_f

KSD-T0A033-000

12 3 4

中文翻译

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与2N3904相关器件

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2N3904/D10Z	TI	获取价格	200mA, 40V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
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2N3904/D11Z	TI	获取价格	200mA, 40V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
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2N3904/D11Z-J14Z	TI	获取价格	40V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-3
2N3904/D11Z-J22Z	TI	获取价格	40V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-3
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2N3904/D26Z	TI	获取价格	200mA, 40V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92