5秒后页面跳转
2N3879 PDF预览

2N3879

更新时间: 2024-01-26 18:44:46
品牌 Logo 应用领域
SEME-LAB 晶体晶体管局域网
页数 文件大小 规格书
2页 27K
描述
NPN POWER SILICON TRANSISTOR

2N3879 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:TO-276AB
包装说明:CHIP CARRIER, R-CBCC-N3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.08外壳连接:COLLECTOR
最大集电极电流 (IC):7 A集电极-发射极最大电压:75 V
配置:SINGLE最小直流电流增益 (hFE):12
JEDEC-95代码:TO-276ABJESD-30 代码:R-CBCC-N3
元件数量:1端子数量:3
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:CHIP CARRIER峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:NO LEAD
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):40 MHz
Base Number Matches:1

2N3879 数据手册

 浏览型号2N3879的Datasheet PDF文件第1页 
2N3879  
ELECTRICAL CHARACTERISTICS (T  
= 25°C unless otherwise stated)  
case  
Parameter  
Test Conditions  
Min.  
Typ.  
Max. Unit  
V
I
I =0.2A  
Collector-Emitter Breakdown Voltage  
Collector-Emitter Cut-Off Current  
Collector-Emitter Cut-Off Current  
Collector-Base Cut-Off Current  
Emitter-Base Cut-Off Current  
75  
V
(BR)CEO*  
C
V
V
V
V
=50V  
5.0  
4.0  
25  
V
CEO*  
CEX*  
CBO*  
EBO*  
CE  
CE  
CB  
EB  
I
I
I
=100V  
=120V  
=7V  
V
=1.5V  
BE  
mA  
10  
I =0.5A  
V
V
V
=5V  
=5V  
=2V  
40  
20  
12  
C
CE  
CE  
CE  
h
I =4A  
DC Current Gain  
80  
100  
1.2  
2.0  
1.8  
FE*  
C
I =4A  
C
V
V
V
I =4A  
I =0.4A  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
CE(sat) *  
BE(sat) *  
BE(on) *  
C
B
I =4A  
I =0.4A  
V
C
B
I =4A  
V
=2V  
C
CE  
Pulse Width < 300µs, Duty Cycle <2%  
*
DYNAMIC CHARACTERISTICS (T  
= 25°C unless otherwise stated)  
case  
Parameter  
Test Conditions  
Min.  
Typ.  
Max. Unit  
|h |  
fe  
I =0.5A  
V
=10V  
Small Signal Current Gain (f=10MHz)  
Output Capacitance (0.1 ` f ` 1MHz)  
4
20  
C
CE  
CB  
C
I =0A  
V
=10V  
175  
pF  
obo  
E
SWITCHING CHARACTERISTICS (T  
= 25°C unless otherwise stated)  
case  
Parameter  
Test Conditions  
Min.  
Typ.  
Max. Unit  
I =0.2A  
V
=30V  
C
CC  
CC  
t
t
Turn On Time  
0.44  
µs  
on  
off  
I =0.4A  
B
I =0.2A  
V
=30V  
C
Turn Off Time  
1.22  
I =- I =0.4A  
B
B
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed  
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.  
Semelab encourages customers to verify that datasheets are current before placing orders.  
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.  
Document Number 5337  
Issue 1  
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk  

与2N3879相关器件

型号 品牌 描述 获取价格 数据表
2N3879SMD SEME-LAB Bipolar NPN Device in a Hermetically sealed

获取价格

2N3879SMD05 SEME-LAB Bipolar NPN Device in a Hermetically sealed

获取价格

2N388 ETC alloy-junction germanium transistors

获取价格

2N3880 ETC TRANSISTOR | BJT | NPN | 15V V(BR)CEO | TO-72

获取价格

2N3884 POWEREX Phase Control SCR 175 Amoeres Average 1200 Volts

获取价格

2N3884 NJSEMI PHASE CONTROL SCR

获取价格