Datasheet > 2N3814SJAN

2N3814SJAN

更新时间： 2024-09-23 22:16:43

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体晶体管
页数	文件大小	规格书
2页	55K
描述
NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393

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数据手册

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2N3814SJAN 数据手册

TECHNICAL DATA

NPN MEDUIM POWER SILICON TRANSISTOR

Qualified per MIL-PRF-19500/ 393

Devices

Qualified Level

JAN

JANTX

JANTXV

2N3418

2N3814S

2N3419

2N3419S

2N3420

2N3420S

2N3421

2N3421S

MAXIMUM RATINGS

2N3418, S 2N3419, S

Ratings

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Symbol 2N3420, S 2N3421, S Unit

Vdc

V_CEO

V_CBO

V_EBO

125

TO- 5*

8.0

2N3418, 2N3419,

2N3420, 2N3421

Collector Current

3.0

5.0

1.0

Adc

I_C

t_P£ 1.0 ms, duty cycle £ 50%

Total Power Dissipation @ T_A= +25⁰C⁽¹⁾

@ T_C= +100⁰C⁽²⁾

P_T

W/⁰C

Operating & Storage Temperature Range

-65 to +200

⁰C

T_op_,T

stg

1) Derate linearly 5.72 mW/⁰C for T_A> 25⁰C

TO-39* (TO205-AD)

2N3418S, 2N3419S,

2N3420S, 2N3421S

2) Derate linearly 150 mW/⁰C for T_C> 100⁰C

*See Appendix A for

Package Outline

ELECTRICAL CHARACTERISTICS

Characteristics

Symbol

Min.

Max.

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Current

I_C= 50 mAdc, I_B= 0

Vdc

2N3418, S; 2N3420, S

2N3419, S; 2N3421, S

V_(BR)

CEO

Collector-Emitter Cutoff Current

V_BE= -0.5 Vdc, V_CE= 80 Vdc

V_BE= -0.5 Vdc, V_CE= 120 Vdc

Collector-Emitter Cutoff Current

V_CE= 45 Vdc, I_B= 0

V_CE= 60 Vdc, I_B= 0

Emitter-Base Cutoff Current

V_EB= 6.0 Vdc, I_C= 0

mAdc

I_CEX

2N3418, S; 2N3420, S

2N3419, S; 2N3421, S

0.3

mAdc

2N3418, S; 2N3420, S

2N3419, S; 2N3421, S

I_CEO

5.0

I_EBO

0.5

V_EB= 8.0 Vdc, I_C= 0

6 Lake Street, Lawrence, MA 01841

120101

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

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