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2N3740_1 PDF预览

2N3740_1

更新时间: 2024-01-18 17:32:40
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管
页数 文件大小 规格书
2页 58K
描述
PNP POWER SILICON TRANSISTOR

2N3740_1 数据手册

 浏览型号2N3740_1的Datasheet PDF文件第2页 
TECHNICAL DATA  
PNP POWER SILICON TRANSISTOR  
Qualified per MIL-PRF-19500/ 441  
Devices  
Qualified Level  
JAN  
2N3740  
2N3741  
JANTX  
JANTXV  
MAXIMUM RATINGS  
Symbol  
2N3741  
80  
Ratings  
2N3740  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Base Current  
60  
VCEO  
VCBO  
VEBO  
IB  
60  
80  
7.0  
2.0  
4.0  
Collector Current  
IC  
Total Power Dissipation  
@ TC = +250C (1)  
@ TC = +1000C  
25  
14  
W
W
0C  
PT  
Operating & Storage Junction Temperature Range  
-65 to +200  
TJ, T  
stg  
TO-66 (TO-213AA)  
THERMAL CHARACTERISTICS  
Characteristics  
Symbol  
Max.  
Unit  
0C/W  
Thermal Resistance, Junction-to-Case  
1) Derate linearly @143 mW/0C for TC > +250C  
7.0  
R
qJC  
*See Appendix A for  
Package Outline  
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)  
Characteristics  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
IC = 100 mAdc  
Symbol  
Min.  
Max.  
Unit  
Vdc  
60  
80  
2N3740  
2N3741  
V(BR)  
CEO  
Collector-Emitter Cutoff Current  
VCE = 40 Vdc  
VCE = 60 Vdc  
Collector-Emitter Cutoff Current  
VCE = 60 Vdc, VBE = 1.5 Vdc  
VCE = 80 Vdc, VBE = 1.5 Vdc  
Collector-Base Cutoff Current  
VCB = 60 Vdc  
10  
10  
mAdc  
hAdc  
hAdc  
2N3740  
2N3741  
ICEO  
ICEX  
ICBO  
IEBO  
300  
300  
2N3740  
2N3741  
100  
100  
2N3740  
2N3741  
VCB = 80 Vdc  
Emitter-Base Cutoff Current  
VEB = 7.0 Vdc  
100  
hAdc  
6 Lake Street, Lawrence, MA 01841  
120101  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
Page 1 of 2  

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