是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.75 |
风险等级: | 5.53 | Is Samacsys: | N |
其他特性: | LOW NOISE | 最大集电极电流 (IC): | 0.3 A |
集电极-发射极最大电压: | 45 V | 配置: | SEPARATE, 2 ELEMENTS |
最小直流电流增益 (hFE): | 115 | JEDEC-95代码: | TO-78 |
JESD-30 代码: | O-MBCY-W6 | JESD-609代码: | e0 |
元件数量: | 2 | 端子数量: | 6 |
最高工作温度: | 175 °C | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | PNP |
最大功率耗散 (Abs): | 0.4 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | WIRE |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 200 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
2N3726LEADFREE | CENTRAL |
功能相似 |
Small Signal Bipolar Transistor, 0.3A I(C), 45V V(BR)CEO, 2-Element, PNP, Silicon, TO-78 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N3726LEADFREE | CENTRAL |
获取价格 |
Small Signal Bipolar Transistor, 0.3A I(C), 45V V(BR)CEO, 2-Element, PNP, Silicon, TO-78 | |
2N3726PBFREE | CENTRAL |
获取价格 |
Small Signal Bipolar Transistor, | |
2N3727 | CENTRAL |
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PNP DUAL SILICON TRANSISTOR | |
2N3727 | NJSEMI |
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PNP SILICON AMPLIFIER TRANSISTORS | |
2N3727 | RAYTHEON |
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Medium Current General Purpose Amplifiers and Switches | |
2N3727LEADFREE | CENTRAL |
获取价格 |
Small Signal Bipolar Transistor, 0.3A I(C), 45V V(BR)CEO, 2-Element, PNP, Silicon, TO-78, | |
2N3727PBFREE | CENTRAL |
获取价格 |
Small Signal Bipolar Transistor, | |
2N3728 | NJSEMI |
获取价格 |
NPN HIGH PERFORMANCE DIFFERENTIAL AMPLIFIERS | |
2N3729 | ETC |
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TRANSISTOR | BJT | PAIR | NPN | 30V V(BR)CEO | TO-77 | |
2N3730 | RAYTHEON |
获取价格 |
Transistor, |