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2N1596

更新时间： 2024-02-21 21:08:40
品牌 Logo 应用领域
DIGITRON 栅栅极
页数 文件大小 规格书
2页 325K
描述
Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 100; Max TMS Bridge Input Voltage: 1; Max DC Reverse Voltage: 1; Capacitance: 5; Package: TO-39

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2N1596 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：CYLINDRICAL, O-MBCY-W3Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.30.00.80
风险等级：5.12配置：SINGLE
最大直流栅极触发电流：10 mAJEDEC-95代码：TO-39
JESD-30 代码：O-MBCY-W3JESD-609代码：e3
元件数量：1端子数量：3
封装主体材料：METAL封装形状：ROUND
封装形式：CYLINDRICAL峰值回流温度（摄氏度）：NOT SPECIFIED
认证状态：Not Qualified最大均方根通态电流：1.6 A
重复峰值反向电压：100 V表面贴装：NO
端子面层：MATTE TIN端子形式：WIRE
端子位置：BOTTOM处于峰值回流温度下的最长时间：NOT SPECIFIED
触发设备类型：SCRBase Number Matches：1

2N1596 数据手册

 浏览型号2N1596的Datasheet PDF文件第2页 
2N1595-2N1599  
SILICON THYRISTORS  
High-reliability discrete products  
and engineering services since 1977  
FEATURES  
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.  
MAXIMUM RATINGS  
Symbol  
Ratings  
2N1595  
2N1596  
2N1597  
200  
2N1598  
2N1599  
Unit  
V
VRSM(REP)  
IT(RMS)  
Peak reverse blocking voltage*  
50  
100  
300  
400  
Forward current RMS (all conduction angles)  
1.6  
Amp  
Peak surge current (one-cycle, 60Hz,  
TJ = -65 to +125°C)  
ITSM  
15  
Amp  
PGM  
PG(AV)  
IGM  
Peak gate power – forward  
Average gate power – forward  
Peak gate current – forward  
Peak gate voltage – forward  
Peak gate voltage – reverse  
0.1  
0.01  
W
W
0.1  
Amp  
V
VGFM  
VGRM  
TJ  
10  
10  
V
Operating junction temperature range  
Storage temperature range  
-65 to +125  
-65 to +150  
°C  
TSTG  
°C  
*VDRM or VRSM can be applied for all types on a continuous dc basis without incurring damage.  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)  
Symbol  
Ratings  
2N1595  
50  
2N1596  
100  
2N1597  
2N1598  
300  
2N1599  
Unit  
VDRM  
Peak forward blocking voltage*  
Min.  
Max.  
200  
400  
V
Peak reverse blocking current  
(Rated VDRM, TJ = 125°C)  
IRRM  
IDRM  
IGT  
1.0  
1.0  
mA  
mA  
mA  
Peak forward blocking current  
Max.  
(Rated VDRM with gate open, TJ = 125°C)  
Gate trigger current  
Typ.  
2.0  
10  
Anode voltage = 7.0 Vdc, RL = 12Ω  
Max.  
Gate trigger voltage  
Typ.  
Max.  
Min.  
0.7  
3.0  
0.2  
VGT  
Anode voltage = 7.0Vdc, RL = 12Ω  
VDRM = rated, RL = 100Ω, TJ = 125°C  
V
Holding current  
IH  
VTM  
tgt  
Typ.  
5.0  
mA  
V
Anode voltage = 7.0 Vdc, gate open  
Forward on-voltage  
IT = 1Adc  
Typ.  
1.1  
2.0  
Max.  
Turn-on time (td+tr)  
IGT = 10mA, IT = 1A  
Typ.  
Typ.  
0.8  
µs  
Turn-off time  
IT = 1A, IR = 1A, dv/dt = 20 V/µs,  
TJ = 125°C  
tq  
10  
µs  
VDRM = rated voltage  
*VDRM or VRSM can be applied for all types on a continuous dc basis without incurring damage.  
Rev. 20130116  
12

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