2N1598

更新时间： 2024-02-02 05:07:24

品牌	Logo	应用领域
COMSET		栅极触发装置可控硅整流器
页数	文件大小	规格书
2页	98K
描述
SILICON THYRISTOR

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技术参数
数据手册

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2N1598 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.67	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	触发设备类型：	SCR
Base Number Matches：	1

2N1598 数据手册

2N1595 thru 2N1599

SILICON THYRISTOR

Industrial-type, low-current silicon controlled rectifiers

in a three-lead package ideal for printed-circuit applications.

Current handling capability of 1.6 amperes at junction temperetures to 125°C

MAXIMUM RATINGS (*)

T_J=125°C unless otherwise noted

2N1595 2N1596 2N1597 2N1598 2N1599

Symbol

V_RSM(REP)

Ratings

Peak reverse blocking voltage *

100

200

1.6

300

400

Forward Current RMS (all conduction

angles)

Amp

I_T(RMS)

Peak Surge Current

(One Cycle, 60Hz, T_J=-65 to +125°C)

Amp

I_TSM

0.1

0.01

0.1

P_GM

Peak Gate Power – Forward

Average Gate Power - Forward

Peak Gate Current – Forward

Peak Gate Voltage - Forward

Peak Gate Voltage - Reverse

P_G(AV)

I_GM

Amp

V_GFM

V_GRM

Operating

Range

Junction

Temperature

T_J

-65 to +125

-65 to +150

°C

Storage Temperature Range

T_STG

ELECTRICAL CHARACTERISTICS

T_J=25°C unless otherwise noted, R_GK=1000Ω

2N1595 2N1596 2N1597 2N1598 2N1599

Symbol

V_DRM

Ratings

Peak Forward Blocking

Voltage *

Min :

100

200

300

400

Peak Reverse Blocking Current

(Rated V_DRM, T_J=125°C)

I_RRM

Max : 1.0

CO MSET SEMICO N DUCTO RS

1/2

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与2N1598相关器件

型号	品牌	描述	获取价格	数据表
2N1598A	CENTRAL	Silicon Controlled Rectifier, 1.6A I(T)RMS, 1000mA I(T), 300V V(DRM), 300V V(RRM), 1 Eleme	获取价格
2N1598A	SSDI	Silicon Controlled Rectifier, 1.3A I(T)RMS, 1000mA I(T), 300V V(DRM), 300V V(RRM), 1 Eleme	获取价格
2N1599	NJSEMI	Silicon Controlled Rectifiers	获取价格
2N1599	COMSET	SILICON THYRISTOR	获取价格
2N1599	ASI	Silicon Controlled Rectifier, 1.6A I(T)RMS, 1600mA I(T), 400V V(DRM), 400V V(RRM), 1 Eleme	获取价格
2N1599	CENTRAL	Silicon Controlled Rectifier, 1.6A I(T)RMS, 1600mA I(T), 400V V(DRM), 400V V(RRM), 1 Eleme	获取价格