Datasheet > 2N1598

2N1598

更新时间： 2024-09-23 20:27:51

品牌	Logo	应用领域
DIGITRON		栅栅极
页数	文件大小	规格书
2页	325K
描述
Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 300; Max TMS Bridge Input Voltage: 1; Max DC Reverse Voltage: 1; Capacitance: 5; Package: TO-39

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技术参数
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2N1598 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.65
最大直流栅极触发电流：	10 mA	最大直流栅极触发电压：	3 V
最大维持电流：	5 mA	最大漏电流：	1 mA
通态非重复峰值电流：	15 A	最大通态电流：	1000 A
最高工作温度：	125 °C	最低工作温度：	-60 °C
断态重复峰值电压：	300 V	子类别：	Silicon Controlled Rectifiers
表面贴装：	NO	触发设备类型：	SCR
Base Number Matches：	1

2N1598 数据手册

2N1595-2N1599

SILICON THYRISTORS

High-reliability discrete products

and engineering services since 1977

FEATURES



Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.

MAXIMUM RATINGS

Symbol

Ratings

2N1595

2N1596

2N1597

200

2N1598

2N1599

Unit

V_RSM(REP)

I_T(RMS)

Peak reverse blocking voltage*

100

300

400

Forward current RMS (all conduction angles)

1.6

Amp

Peak surge current (one-cycle, 60Hz,

T_J= -65 to +125°C)

I_TSM

Amp

P_GM

P_G(AV)

I_GM

Peak gate power – forward

Average gate power – forward

Peak gate current – forward

Peak gate voltage – forward

Peak gate voltage – reverse

0.1

0.01

0.1

Amp

V_GFM

V_GRM

T_J

Operating junction temperature range

Storage temperature range

-65 to +125

-65 to +150

°C

T_STG

°C

*V_DRMor V_RSMcan be applied for all types on a continuous dc basis without incurring damage.

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Symbol

Ratings

2N1595

2N1596

100

2N1597

2N1598

300

2N1599

Unit

V_DRM

Peak forward blocking voltage*

Min.

Max.

200

400

Peak reverse blocking current

(Rated V_DRM, T_J= 125°C)

I_RRM

I_DRM

I_GT

1.0

Peak forward blocking current

Max.

(Rated V_DRMwith gate open, T_J= 125°C)

Gate trigger current

Typ.

2.0

Anode voltage = 7.0 Vdc, R_L= 12Ω

Max.

Gate trigger voltage

Typ.

Max.

Min.

0.7

3.0

0.2

V_GT

Anode voltage = 7.0Vdc, R_L= 12Ω

V_DRM= rated, R_L= 100Ω, T_J= 125°C

Holding current

I_H

V_TM

t_gt

Typ.

5.0

Anode voltage = 7.0 Vdc, gate open

Forward on-voltage

I_T= 1Adc

Typ.

1.1

2.0

Max.

Turn-on time (t_d+t_r)

I_GT= 10mA, I_T= 1A

Typ.

0.8

µs

Turn-off time

I_T= 1A, I_R= 1A, dv/dt = 20 V/µs,

T_J= 125°C

t_q

µs

V_DRM= rated voltage

*V_DRMor V_RSMcan be applied for all types on a continuous dc basis without incurring damage.

Rev. 20130116

中文翻译

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与2N1598相关器件

型号	品牌	获取价格	描述	数据表
2N1598A	CENTRAL	获取价格	Silicon Controlled Rectifier, 1.6A I(T)RMS, 1000mA I(T), 300V V(DRM), 300V V(RRM), 1 Eleme
2N1598A	SSDI	获取价格	Silicon Controlled Rectifier, 1.3A I(T)RMS, 1000mA I(T), 300V V(DRM), 300V V(RRM), 1 Eleme
2N1599	NJSEMI	获取价格	Silicon Controlled Rectifiers
2N1599	COMSET	获取价格	SILICON THYRISTOR
2N1599	ASI	获取价格	Silicon Controlled Rectifier, 1.6A I(T)RMS, 1600mA I(T), 400V V(DRM), 400V V(RRM), 1 Eleme
2N1599	CENTRAL	获取价格	Silicon Controlled Rectifier, 1.6A I(T)RMS, 1600mA I(T), 400V V(DRM), 400V V(RRM), 1 Eleme
2N1599	SSDI	获取价格	Silicon Controlled Rectifier, 2.5A I(T)RMS, 1600mA I(T), 400V V(DRM), 1 Element, TO-205AD,
2N1599	DIGITRON	获取价格	Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 400; Max TMS Bridge Inp
2N-15F	APITECH	获取价格	Fixed Attenuator, 0MHz Min, 2500MHz Max, ROHS COMPLIANT PACKAGE
2N-15M	APITECH	获取价格	Fixed Attenuator, 0MHz Min, 2500MHz Max, ROHS COMPLIANT PACKAGE

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