Datasheet > 2KBP10E4

2KBP10E4

更新时间： 2023-01-03 07:23:17

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
3页	174K
描述
DIODE 2 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, PLASTIC, CASE KBPM, 4 PIN, Bridge Rectifier Diode

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2KBP10E4 数据手册

2KBP005M thru 2KBP10M, 3N253 thru 3N259

Vishay General Semiconductor

100

= 25°C

f = 1.0 MH_Z

Vsig = 50mVp-p

0.1

T_J= 25 °C

Pulse Width = 300 µs

1% Duty Cycle

0.1

0.01

0.2

0.4

0.6

0.8

1.0

1.2

1.4

100

Instantaneous Forward Voltage (V)

Reverse Voltage (V)

Figure 3. Typical Forward Characteristics Per Leg

Figure 5. Typical Junction Capacitance Per Leg

100

T_J= 125°C

T_J= 100°C

0.1

0.01

T_J= 25°C

100

Percent of Rated Peak Reverse Voltage (%)

Figure 4. Typical Reverse Leakage Characteristics Per Leg

Package outline dimensions in inches (millimeters)

Case Style KBPM

0.600 (15.24)

0.125 x 45

(3.2)

0.560 (14.22)

0.460 (11.68)

0.420 (10.67)

0.500 (12.70)

0.460 (11.68)

(15.2)

MIN.

0.50 (12.7) Min.

0.060

(1.52)

0.034 (0.86)

0.028 (0.76)

DIA.

0.160 (4.1)

0.140 (3.6)

0.105 (2.67)

0.085 (2.16)

0.200 (5.08)

0.180 (4.57)

Polarity shown on front side of case: positive lead by beveled corner

Document Number 88532

08-Jul-05

www.vishay.com

1 23

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