WTE
PO WER SEMICONDUCTORS
2KBP005M – 2KBP10M
2.0A GLASS PASSIVATED BRIDGE RECTIFIER
Features
!
Glass Passivated Die Construction
!
!
!
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Low Forward Voltage Drop
High Current Capability
High Reliability
High Surge Current Capability
Ideal for Printed Circuit Boards
L
A
KBP
Min
Dim
A
B
C
D
E
Max
15.24
11.68
—
B
J
14.22
10.67
15.2
4.57
3.60
2.16
0.76
1.52
11.68
12.7
+
~
~
-
5.08
4.10
2.67
0.86
—
C
K
Mechanical Data
!
!
G
H
I
Case: Molded Plastic
H
I
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: As Marked on Body
Weight: 1.7 grams (approx.)
Mounting Position: Any
J
12.7
—
E
K
L
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G
3.2 x 45° Typical
D
All Dimensions in mm
Marking: Type Number
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
2KBP 2KBP 2KBP 2KBP 2KBP 2KBP 2KBP
Characteristic
Symbol
Unit
005M
01M
02M
04M
06M
08M
10M
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
100
200
400
600
800
1000
V
RMS Reverse Voltage
VR(RMS)
IO
35
70
140
280
2.0
420
560
700
V
A
Average Rectified Output Current
(Note 1)
@TA = 50°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM
60
A
Forward Voltage (per element)
@IF = 2.0A
VFM
IRM
1.1
V
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 100°C
10
500
µA
Rating for Fusing (t<8.3ms)
I2t
Cj
15
25
A2s
pF
Typical Junction Capacitance per element (Note 2)
Typical Thermal Resistance (Note 3)
RꢀJA
Tj, TSTG
30
K/W
°C
Operating and Storage Temperature Range
-55 to +165
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
3. Thermal resistance junction to ambient mounted on PC board with 12mm2 copper pad.
2KBP005M – 2KBP10M
1 of 3
© 2002 Won-Top Electronics