Datasheet > 2KBPXXM-E4

2KBPXXM-E4

更新时间： 2024-11-27 01:26:11

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	90K
描述
Glass Passivated Single-Phase Bridge Rectifier

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2KBPXXM-E4 数据手册

2KBPxxM-E4, 3N25x-E4

Vishay General Semiconductor

www.vishay.com

Glass Passivated Single-Phase Bridge Rectifier

FEATURES

• UL recognition file number E54214

• Ideal for printed circuit board

• High surge current capability

• High case dielectric strength

−

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

−

Case Style KBPM

TYPICAL APPLICATIONS

General purpose use in AC/DC bridge full wave rectification

for switching power supply, home appliances, office

equipment, and telecommunication applications.

PRIMARY CHARACTERISTICS

Package

KBPM

2.0 A

I_F(AV)

MECHANICAL DATA

V_RRM

I_FSM

50 V to 1000 V

60 A

Case: KBPM

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E4 - RoHS-compliant, commercial grade

I_R

5 μA

V_Fat I_F= 3.14 A

T_Jmax.

1.1 V

Terminals: Silver plated leads, solderable per

J-STD-002 and JESD22-B102

165 °C

In-line

Diode variations

Polarity: As marked on body

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

2KBP005M 2KBP01M 2KBP02M 2KBP04M 2KBP06M 2KBP08M 2KBP10M

PARAMETER

SYMBOL

UNIT

3N253

3N254

3N255

3N256

3N257

3N258

3N259

Maximum repetitive peak reverse

voltage

V_RRM

100

200

400

600

800

1000

Maximum RMS voltage

V_RMS

V_DC

140

200

280

400

420

600

560

800

700

Maximum DC blocking voltage

100

1000

Maximum average forward output

rectified current at T_A= 55 °C

I_F(AV)

2.0

Peak forward surge current single half

sine-wave superimposed on rated

load

I_FSM

Rating for fusing (t < 8.3 ms)

I²t

A²s

°C

Operating junction and storage

temperature range

T_J, T_STG

-55 to +165

ELECTRICAL CHARACTERISTICS (T_A= 25 °C unless otherwise noted)

2KBP005M 2KBP01M 2KBP02M 2KBP04M 2KBP06M 2KBP08M 2KBP10M

TEST

CONDITIONS

PARAMETER

SYMBOL

UNIT

3N253

3N254

3N255

3N256

3N257

3N258

3N259

Maximum instantaneous

forward voltage drop per

diode

V_F

3.14 A

1.1

Maximum DC reverse

current at rated DC

blocking voltage per diode

T_A= 25 °C

5.0

I_R

μA

T_A= 125 °C

500

Typical junction

capacitance per diode

4.0 V, 

1 MHz

T_J

Revision: 05-Aug-15

Document Number: 88532

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4

中文翻译

下载PDF

与2KBPXXM-E4相关器件

型号	品牌	获取价格	描述	数据表
2KC1001	KEXIN	获取价格	NPN Transistors
2KC1002	KEXIN	获取价格	NPN Transistors
2KC1003	KEXIN	获取价格	NPN Transistors
2KC1004	KEXIN	获取价格	NPN Transistors
2KC1005	KEXIN	获取价格	NPN Transistors
2KC1006	KEXIN	获取价格	NPN Transistors
2KC1007	KEXIN	获取价格	NPN Transistors
2KC1008	KEXIN	获取价格	NPN Transistors
2KC1009	KEXIN	获取价格	Hign Voltage NPN Transistors
2KC1010	KEXIN	获取价格	Hign Voltage NPN Transistors